Wannier-Stark localization in semiconductor superlattices

半导体超晶格中的 Wannier-Stark 局域化

• 批准号: 05044109
• 负责人: FUJIWARA Kenzo
• 金额: $ 4.48万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05044109/
• 关键词: Semiconductor Superlattice; Miniband; Optical Spectra; Stark Effects; Electrooptic Effects; Photoconductivity; Han-Hove Singularity; Heterointerface; Semiconductor Superlattice; Miniband; Optical Spectra; Stark Effects; Electrooptic Effects; Photoconductivity; Han-Hove Singularity; Heterointerface

In this project we have investigated Wannier-Stark localization phenomena in semiconductor superlattices, aiming at clucidating the fundamental spectroscopic and tunneling transporl properties of the ultra-thin quantum heterostructures under high electric fields. In the artificially designed and fabricated superlattices as coupled-quantum-wells systems, varlous interesting quantum phenomena have emerged as a result of Stark effects on the quantized miniband states. By employing mainly optical methods such as photocurrent, photoluminescence, photoluminescence excitation and electroreflectance, key factors have been clarified which affect the spectroscopic structures and the tunneling transport properties of photogenerated carriers involving with optical absorption, recombination and tunneling processes. The following results are obtained from studies of this project : (1) fundamental band-edge absorption propeties of GaAs/AlAs superlattices with different miniband widths and their ralationship with the miniband dispersion, (2) correlation between the heterointerface fluctuations and the spectral and lateral photoluminescence properties, (3) dynamic transmission intensity oscillations due to the Starkladder resonances, (4) correlation between the radiative recombinations and tunneling and lateral transport properties of photogenaraied carriers, (5) quantum interference between the Stark ladder localized states associated with different subbands, (6) oscillator strengths of the excitonic Stark ladder transitions and their dependence on the miniband width, (7) optical properties of quasi-bound Stark ladder localized srates.

在这个项目中，我们研究了半导体超级晶格中的Wannier-Stark定位现象，目的是诱发高电场下超薄量子异质结构的基本光谱和隧道转运性能。在作为耦合量子孔系统的人工设计和制造的线中，由于对量化的微型态状态的鲜明影响而出现了清漆有趣的量子现象。通过主要采用光电，光致发光，光致发光激发和电触及能力等光电方法，已经阐明了关键因素，这些因素会影响光谱结构以及光源载体的隧穿传输特性，这些载体涉及光学吸收，重新组合和隧道过程。从对该项目的研究中获得以下结果：（1）具有不同的微型宽度宽度的GAA/ALAS超级晶格的基本带边缘吸收预测及其与Miniband分散的关系，（2）异质界面波动以及光谱和后期光照射的触发性的触发性，（3）动态的距离（3）动力学的距离（3） (4) correlation between the radiative recombinations and tunneling and lateral transport properties of photogenaraied carriers, (5) quantum interference between the Stark ladder localized states associated with different subbands, (6) oscillator strengths of the excitonic Stark ladder transitions and their dependence on the miniband width, (7) optical properties of quasi-bound Stark ladder localized srates.