Wannier-Stark localization in semiconductor superlattices

半导体超晶格中的 Wannier-Stark 局域化

• 批准号: 05044109
• 负责人: FUJIWARA Kenzo
• 金额: $ 4.48万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05044109/
• 关键词: Semiconductor Superlattice; Miniband; Optical Spectra; Stark Effects; Electrooptic Effects; Photoconductivity; Han-Hove Singularity; Heterointerface

In this project we have investigated Wannier-Stark localization phenomena in semiconductor superlattices, aiming at clucidating the fundamental spectroscopic and tunneling transporl properties of the ultra-thin quantum heterostructures under high electric fields. In the artificially designed and fabricated superlattices as coupled-quantum-wells systems, varlous interesting quantum phenomena have emerged as a result of Stark effects on the quantized miniband states. By employing mainly optical methods such as photocurrent, photoluminescence, photoluminescence excitation and electroreflectance, key factors have been clarified which affect the spectroscopic structures and the tunneling transport properties of photogenerated carriers involving with optical absorption, recombination and tunneling processes. The following results are obtained from studies of this project : (1) fundamental band-edge absorption propeties of GaAs/AlAs superlattices with different miniband widths and their ralationship with the miniband dispersion, (2) correlation between the heterointerface fluctuations and the spectral and lateral photoluminescence properties, (3) dynamic transmission intensity oscillations due to the Starkladder resonances, (4) correlation between the radiative recombinations and tunneling and lateral transport properties of photogenaraied carriers, (5) quantum interference between the Stark ladder localized states associated with different subbands, (6) oscillator strengths of the excitonic Stark ladder transitions and their dependence on the miniband width, (7) optical properties of quasi-bound Stark ladder localized srates.

在这个项目中，我们研究了半导体超级晶格中的Wannier-Stark定位现象，目的是诱发高电场下超薄量子异质结构的基本光谱和隧道转运性能。在作为耦合量子孔系统的人工设计和制造的线中，由于对量化的微型态状态的鲜明影响而出现了清漆有趣的量子现象。通过主要采用光电，光致发光，光致发光激发和电触及能力等光电方法，已经阐明了关键因素，这些因素会影响光谱结构以及光源载体的隧穿传输特性，这些载体涉及光学吸收，重新组合和隧道过程。从对该项目的研究中获得以下结果：（1）具有不同的迷你乘以宽度的GAA/ALAS超级晶格的基本带边缘吸收预测及其与Miniband分散的分配，（2）异质面波动以及光谱和频谱波动和频谱之间的相关性以及光致发光的性能，（3）由于呈量降子共振引起的动态传输强度振荡，（4）辐射重组与隧道的相关性与光塑性载体的横向转运特性之间的相关性，（5）量子干扰与不同的子带相关的量子干扰状态之间的量子干扰， （6）激发型梯形梯子过渡的振荡器强度及其对小型宽度的依赖性，（7）准结合的Stark stark梯子局部局部srates的光学特性。

项目成果

U.Jahn et al.: "Cathodoluminescence Studies of Exciton Localization in GaAs-AlGaAs Single Quantum Wells" Applied Physics Letters. (submitted).

U.Jahn 等人：“GaAs-AlGaAs 单量子阱中激子局域化的阴极发光研究”应用物理快报。

U.Jahn, K.Fujiwara, R.Hey, J.Kastrup, H.T.Grahn, J.Menninger: "Influence of Growth Related Thickness Fluctuations on the Spectral and Lateral Luminescence Intensity Distribution" in GaAs Quantum Wells Journal of Crystal Growth. (to be publlshed).

U.Jahn、K.Fujiwara、R.Hey、J.Kastrup、H.T.Grahn、J.Menninger：“与生长相关的厚度波动对光谱和横向发光强度分布的影响”，发表在 GaAs Quantum Wells Journal of Crystal Growth 中。

I.Tanaka et al.: "Critical Electric Field for Stark-ladder Formation in a GaAs/AlAs Superlattice" Physical Review B. 48. 2787-2790 (1993)

I.Tanaka 等人：“GaAs/AlAs 超晶格中斯塔克阶梯形成的临界电场”物理评论 B.48.2787-2790 (1993)

K.Fujiwara,K.Kawashima,M.Hosoda,K.Tominaga,T.Yamamoto,K.Ploog: "Transmission Intensity Oscillations in GaAs/AlAs Superlattices Induced by Photogenerated Charge Transport" Superlattices and Microstructures,. 15. 351-355 (1994)

K.Fujiwara、K.Kawashima、M.Hosoda、K.Tominaga、T.Yamamoto、K.Ploog：“光生电荷传输引起的 GaAs/AlAs 超晶格中的传输强度振荡”超晶格和微结构。

L.Schrottke, H.T.Grahn, R.Klann, K.Fujiwara: "In-plane Photocurrent Spectroscopy in GaAs/AlAs Superlattices" Applied Physics Letters. (in print). (1995)

L.Schrottke、H.T.Grahn、R.Klann、K.Fujiwara：“GaAs/AlAs 超晶格中的面内光电流光谱”应用物理快报。