RT spin injection to Si using ferromagnetic insulator

使用铁磁绝缘体对 Si 进行 RT 自旋注入

• 批准号: 23656438
• 负责人: TAKAHASHI Yukiko
• 金额: $ 2.08万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656438/
• 关键词: スピンフィルター; スピンフィルター効果; 強磁性絶縁体; Ｃｏフェライト; スピンフィルタ

The purpose of this work is to realize the high efficiency spin injection to Si at RT by applying the spin-filter effect of Co ferrite. Two kinds of oxidation method, radical and ozone, were tried to obtain high quality Co ferrite without antiphase boundaries(APB) and oxygen defects which act as the hopping sites for electron conduction. It was found that the number of the density of APBs and defects in the Co ferrite made by the radial and ozone are similar to that by the thermal oxidation and the spin-filter effect at RT was quite low compared with that at 10 K.

这项工作的目的是利用钴铁氧体的自旋过滤效应，实现室温下对硅的高效自旋注入。尝试采用自由基和臭氧两种氧化方法来获得高质量的钴铁氧体，该钴铁氧体不含反相界（APB）和作为电子传导跳跃点的氧缺陷。结果发现，径向和臭氧制备的钴铁氧体中APB的密度和缺陷数量与热氧化相似，并且与10 K相比，室温下的自旋过滤效应相当低。