Development of Large Area and High Performance Radiation Imaging Detectors for Medical Use

医用大面积高性能辐射成像探测器的开发

基本信息

批准号：
15300181
负责人：
YASUDA Kazuhito
金额：
$ 10.24万
依托单位：
Nagoya Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15300181/
关键词：
Radiation detector Cadmium Telluride Metalorganic Vapor Phase Epitaxy Imaging detector CdTe X線検出器 γ線検出器 MOVPE CdZnTe

项目摘要

Development of large area and high performance radiation imaging detectors using thick CdTe layers grown by Metalorganic vapor phase epitaxy (MOVPE) has been studied. The following 3 major achievements were obtained.1.Development of CdTe/n^<+->GaAs heterojunction diode detectors.Heterojunction diode detectors were fabricated using thick p-CdTe layers grown on n^<+->GaAs substrates by MOVPE. Detection and energy discrimination capabilities for the incident gamma ray of 59 keV from Am source were confirmed for the first time. Optimization of the detector structure was also carried out.2.Development of direct growth technique of CdTe lavers on Si substrates by MOVPE.Growth of single crystal CdTe layers directly on Si substrates by MOVPE was achieved for the first time. As a pretreatment before the CdTe growth on Si, the Si substrates were annealed with GaAs pieces in the hydrogen environment. Growth of high quality CdTe thick layers, which were necessary for radiation detectors, was also achieved by using the following growth technique. After the growth of thin CdTe layers on Si substrates, residual stress in the grown layers were relaxed, and thick CdTe layers were grown on them.3.Development of CdTe/n^<+->Si heterojunction diode detectors.On the basis of results obtained in 1 and 2 above, heterojunction diode detectors using thick p-CdTe layers grown directly on n^<+->Si substrates were fabricated. The detectors were confirmed to have good electrical characteristics. Improvements of the detector performance were also studied.Throughout the above studies, fundamental techniques which were inevitable to realize the purposed detectors were established.

已经研究了使用金属有机蒸汽相（MOVPE）生长的厚CDTE层开发大面积和高性能辐射成像检测器。 1. CDTE/N^<+ - > GAAS杂合二极管检测器的开发。HeteroJunction二极管检测器是使用MOVPE在N^<+ - > GAAS底物上生长的厚的P-CDTE层制造的。首次确认了来自AM来源的59 KEV的事件伽马射线的检测和能量歧视能力。还进行了检测器结构的优化。2。通过movpe。首次通过Movpe直接在SI底物上通过Movpe来开发CDTE LAVERS在SI底物上的直接生长技术的开发。作为在SI上的CDTE生长之前进行的预处理，在氢环境中，用GAAS将Si底物退火。也通过使用以下生长技术实现了辐射探测器所需的高质量CDTE厚层的生长。 After the growth of thin CdTe layers on Si substrates, residual stress in the grown layers were relaxed, and thick CdTe layers were grown on them.3.Development of CdTe/n^<+->Si heterojunction diode detectors.On the basis of results obtained in 1 and 2 above, heterojunction diode detectors using thick p-CdTe layers grown directly on n^<+->Si底物是制造的。探测器被确认具有良好的电特性。还研究了探测器性能的改善。通过上述研究，基本技术是不可避免地确定了有目的的探测器的。