Development of Methods to Generate Refined Beams of Neutral Free Radicals for Control of Surface Fundamental Processes

开发产生精制中性自由基束以控制表面基本过程的方法

基本信息

批准号：
14540381
负责人：
HAYASHI Keiji
金额：
$ 2.43万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14540381/
关键词：
Neutral Free Radical Control of Surface Fundamental Processes Negative Ion Beam Laser Photo-Excitation Ab Initio Molecular Orbital Theory Chemical Physics Molecular Design Semiconductor Device Processing 高感度その場観察手法

项目摘要

In order to further evolve quantum-functional nano-devices using metastable condensed phases, it has -become indispensable in recent years to ingeniously utilize selective surface reactions of neutral free radicals for the device processing. The problem encountered in the precise experimental study of a chemical reaction between a neutral free-radical species and a well-characterized material surface is how to supply a sufficient-flux purified beam of the momentum-controlled neutral free radicals onto the surface. The continuous supply is all the more difficult, although steady-flux continuous beams are generally more useful for thin-film growth application than pulsed ones. In order to overcome this difficulty the investigator has proposed several experimental approaches to produce steady-flux refined beams of neutral free radicals (RBNR). Two of these approaches are photo-deionization of negative ion beams (PDINIB) and photo-dissociation of energetic compound beams (PDECB).In this st … More udy, firstly, we achieved further enhancement of the rate of neutral free-radical production by improving a trial surface-processing apparatus utilizing RBNR produced by the PDINIB method. The determination of the RBNR flux was performed based on ion-current diference measurement by light intensity modulation (ICD) developed in our previous study. Then, we improved the S/N ratio and the spatial resolution of the ICD measurement system 40 and 25 times, respectively. This improved monitoring system was used for measurements of the spatial profile of the neutral-beam flux.In an application of the PDINIB method to the, doping of photo-deionized Cr atoms during the low-temperature epitaxial growth of (Al, Ga)N by a PDECB-based approach, we found a possibility that incorporation of the Cr atoms into the growing surface of the diluted magnetic semiconductor (Al, Ga, Cr)N is enhanced by the oblique irradiation. Furthermore, we succeeded in production of well-collimated neutral free-radical beams to reveal the angular-selective surface-reaction mechanism responsible for the epitaxy. Less

为了进一步发展使用亚稳态凝聚相的量子功能纳米器件，巧妙地利用中性自由基的选择性表面反应来进行器件加工已成为不可或缺的化学精确实验研究中遇到的问题。中性自由基物质与良好表征的材料表面之间的反应是如何将动量控制的中性自由基的足够通量的纯化光束供应到表面上，尽管连续供应更加困难。稳定通量连续光束通常比脉冲光束更适合薄膜生长应用，为了克服这一困难，研究人员提出了几种稳定通量细化中性自由基光束（RBNR）的实验方法。是负离子束的光去离子（PDINIB）和高能复合束的光解离（PDECB）。在这项研究中，首先，我们实现了中性自由基产生率的进一步提高。通过改进利用 PDINIB 方法产生的 RBNR 的试验表面处理装置，基于我们之前研究中开发的光强度调制 (ICD) 的离子电流差测量来进行 RBNR 通量的测定。 /N 比和 ICD 测量系统的空间分辨率分别为 40 倍和 25 倍。这种改进的监测系统用于测量中性束通量的空间分布。在 PDINIB 方法的应用中，通过基于 PDECB 的方法在 (Al, Ga)N 低温外延生长过程中掺杂光去离子 Cr 原子，我们发现了将 Cr 原子掺入稀释磁性半导体 (Al, Ga)N 生长表面的可能性。 Ga, Cr)N 通过倾斜照射得到增强，此外，我们成功地产生了准直的中性自由基束，揭示了导致该现象的角度选择性表面反应机制。外延.少