Observation and analysis of the irradiation temperature dependence in the formation efficiency of the irradiation-induced defects in SiC aid its related materials

SiC及其相关材料中辐照缺陷形成效率对辐照温度依赖性的观察与分析

基本信息

批准号：
12680509
负责人：
OKADA Moritami
金额：
$ 1.86万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

Single crystalline silicon carbide (SiC), which is one of wide-gap semiconductors (WGS), is expected to be an excellent material by way of electronic devices acting under severe environment such as intense radiation field (electron, neutron, proton, etc) with high temperature and extreme low temperature. Samples were irradiated in various temperatures with reactor radiations or electrons. The radiation effects were observed by using the method of the optical spectroscopy (OS) and the ESR. The related materials such as nitrides, oxides and other WGS's were also examined These results are summarized following.1) It has been found that the irradiation temperature dependence (ITD) of the formation efficiency of the Si-vacancy-type-defect formed in n-type SiC due to the irradiation was different from the usual established theory. It was observed by both of the OS and the ESR that it had the maximum value at about 200K between 10K and 370K. On the other hand, it has been also found that there is the ITD similar to SiC, in rutile (TiO2) and AIN, which are a covalent bonding material. From these facts, we proposed that it does cause to the covalent bonding.2) However, in the p-type SiC it could not clearly get the similar phenomenon. It was thought because the effect on irradiation temperature was covered by a nuclear heating which was caused to the (n, α) reaction of acceptor boron in SiC.3) It has been found that the effect on ^<31>P donor introduced by the nuclear-transformation-doping in SiC is effective.4) The p-type SiC was changed into the n-type one due to neutron irradiation.

单晶硅碳化物（SIC）是宽间隙半导体之一（WGS）之一，预计将通过在严重环境下作用在诸如强烈的辐射场（电子，中子，质子，质子等）等严重环境下作用的电子设备，具有高温和高温和极低温度。用反应器辐射或电子在各种温度中照射样品。使用光谱法（OS）和ESR的方法观察到辐射效应。随后还概述了相关材料，例如硝酸盐，氧化物和其他WGS。1）发现，由于辐射引起的N型SIC形成的Si-Vacangany-Defect的形成效率的辐射温度依赖性（ITD）与经常建立的理论不同。 OS和ESR都观察到它的最大值在10K和370K之间约为200K。另一方面，还发现有类似于SIC，在金红石（Tio2）和Ain中，它们是共价键合材料。从这些事实中，我们提出它确实会导致共价键合。之所以想到，是因为对辐射温度的影响是由核加热覆盖的，这是对SIC的受体硼的（n，α）反应引起的。