Wide band gap semiconductor devices

宽带隙半导体器件

• 批准号: 2887562
• 金额: --
• 依托单位: University of York
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2887562
• 关键词: Wide; band; gap; semiconductor; devices

A key enabler of power electronics is the power device and in the last two decades there has been a gradual transition from silicon-based power devices to wide band gap-based power devices. Both Silicon Carbide (SiC) and Gallium Nitride (GaN) based power devices have been demonstrating superior performance compared to silicon, which has seen their uptake in a range of power electronics application. There are projections that suggest if 90% of all new power electronic systems installed would use SiC and GaN power devices then this would result in a 25% decrease in energy use globally every year. The improvements are based on their inherent material characteristics and device designs.There is still further scope for improvements in such power semiconductor devices which operated with improved characteristics. This project relates to novel device designs for such wide band gap materials. A significant portion of the work will relate to the design and modelling of novel wide band gap semiconductor-based devices, primarily using TCAD software.

电力电子设备的关键推动力是电源设备，在过去的二十年中，从基于硅的功率设备到宽基隙基于宽带的电源设备进行了逐步过渡。与硅相比，基于碳化硅（SIC）和氮化炮（GAN）的功率设备都表现出卓越的性能，硅已经在一系列电源电子应用中吸收了。有一些预测表明，如果安装的所有新电力电子系统中有90％使用SIC和GAN电源设备，那么每年全球能源使用量会减少25％。这些改进是基于它们固有的材料特征和设备设计的。在此类功率半导体设备中，进一步改进了具有改进特性的功率。该项目涉及如此宽带隙材料的新型设备设计。这项工作的很大一部分将与主要使用TCAD软件的新型宽带隙半导体设备的设计和建模有关。