Investigation of new semiconductor materials for wide band-gap devices

宽带隙器件新型半导体材料研究

• 批准号: 2291625
• 金额: --
• 依托单位: University of Strathclyde
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2291625
• 关键词: Investigation; new; semiconductor; materials; wide

This project aims to develop new and enhanced wide band-gap semiconductor alloys, with a view to application in improved devices. In particular, we are targetting ultra-violet (UV) emitters, including those in the deep UV wavelength ranges where there are important applications in water purification and sterilsation, as well as high-frequency high-power transistors. We will work closely with crystal growth specialists, in particular colleagues at Nottingham University, Nagoya University, Nanjing University and CNRS-CRHEA in France. Material produced by epitaxial techniques, such as molecular beam epitaxy, will be characterised by the student using advanced techniques that investigate material composition, structure and optical properties at a sub-micron length scale. It is closely connected to an EPSRC Strategic Equipment Award which provided a new £1M field-emission gun electron probe micro-analyser (FEG-EPMA) and low-voltage scanning electron microscope, which are configured for highly spatially resolved x-ray microanalysis and cathodoluminescence studies of semiconductors. One targetmaterial is the alloy aluminium gallium nitride (AlGaN) which has attractive properties for the UV energy range. The project will experimentally test the theoretical predictions of material properties and aim to demonstrate the quality of AlGaN layers fabricated in a range of crystal orientations and with a range of doping. This will open the way to producing more effective, more compact and more efficient devices in the UV range.

该项目旨在开发新的和增强的宽带隙半导体合金，以期在改进的设备中应用。特别是，我们针对的是紫外线（UV）发射器，包括在深紫外线波长范围内的发射器，其中在水净化和消毒中有重要应用以及高频高功率晶体管。我们将与诺丁汉大学，名古屋大学，南京大学和法国的CNRS-Crhea紧密合作，特别是诺丁汉大学的水晶增长专家。由学生束外延产生的材料（例如分子束外延）的特征是使用高级技术，这些技术以亚微米长度尺度研究材料组成，结构和光学特性。它与EPSRC战略设备奖密切相关，该奖项提供了新的100万英镑的现场发射枪支电子探针微型分析仪（FEG-EPMA）和低压扫描电子显微镜，该扫描电子显微镜配置为高度空间分辨的X射线微分析和透视剂研究的X射线微粒研究。一个靶标的是合金铝制氮化铝（Algan），其具有紫外线能量范围的吸引力。该项目将在实验中测试材料特性的理论预测，并旨在证明在一系列晶体取向和一系列掺杂范围内制造的Algan层的质量。这将为在紫外线范围内生产更有效，更紧凑，更高效的设备开辟道路。