Formation of photo-thermoelectric energy conversion functional films by controlling film structure in nanometer scale.
通过纳米尺度控制薄膜结构形成光热电能量转换功能薄膜。
基本信息
- 批准号:10650649
- 负责人:
- 金额:$ 2.18万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:1998
- 资助国家:日本
- 起止时间:1998 至 1999
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In order to exploit solar energy resources, the photo-thermoelectric energy conversion functional films have been investigated. The subject has been composed of two functional parts, I.e., (1) : photo-thermal energy conversion films and (2) : thermoelectric energy conversion films. The aim of the investigation is to improve individual function by forming the suitable mesoscopic structure in the films.(1) Ag/MgO and/or W-N/AlN multi-layer sutuctured films are formed by the sputtering method. With increasing Ag layer thickness, the optical properties change from the surface-plasmon absorption due to fine particle into bulk metallic property via conductive absorption which shows relatively large absorbance in the near infrared region as well as visible light region. The functionally graded Ag/MgO film is formed based on the above results. Then the total solar energy absorbance of 87% is achieved. The same procedure is performed on the W-N/AlN system. The finally obtained functionally graded W-N/AlN film shows a total solar energy absorbance of 93%.(2) Sputtered Fe-Si films are annealed (853K x 2h) in a vacuum. The change of the electrical resistivity (ρ) and the Seebeck coefficient (α) are measured. The film with a composition of FeSiィイD22ィエD2 shows maximum values of ρ and α. The multi-layered FeSiィイD22ィエD2/C films are formed. The value of ρ is successfully reduced but the α is also reduced. The power factor is not improved consequently. The sputtered Co-Sb films are also formed. By annealing, the amorphous-structured films change into polycrystalline structure including high-density voids with nanometer size. Such a nano-void structure may contribute to the reduction of thermal conductivity.It has been presented in this research that the introduction of the suitable mesoscopic structures into the intrinsic film structure is effective to improve the inherent function. The performing the optimization will be a future problem.
为了利用太阳能资源,已经对光电函数膜进行了摄影。投资是通过在薄膜中形成合适的介质结构,由ALN多层缝合膜形成,由溅射方法形成,而Ag层厚度增加。金属通过在近红外区域以及可见的光区域中的相对吸收性。 93%的太阳能吸收率(2个溅射的Fe-Si膜被消除(853K x 2H)。显示ρ和α的最大值退火,无定形结构的膜变为多晶结构,包括具有仪表大小的空隙。合适的介质结构内在膜结构是改善E优化的功能。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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ISHIGURO Takashi其他文献
ISHIGURO Takashi的其他文献
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{{ truncateString('ISHIGURO Takashi', 18)}}的其他基金
Fabrication of microscopic infrared spectrum analysis system for in-situ observation of chemical reaction in the water
原位观察水中化学反应的显微红外光谱分析系统的研制
- 批准号:
23360282 - 财政年份:2011
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Investigation of the formation process of transparent conductive film by using superheated steam and/or water plasma jet
利用过热蒸汽和/或水等离子体射流形成透明导电膜的过程研究
- 批准号:
22656139 - 财政年份:2010
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Fabrication of opto-functional AR coating for the solar spectrum by green chemistry process with water
通过水的绿色化学工艺制备太阳光谱光学功能增透膜
- 批准号:
20360292 - 财政年份:2008
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Evaluation of Optical Properties of Dye-sensitized Solar Cell Incorporating Mesoscopic Interfacial Roughness
结合介观界面粗糙度的染料敏化太阳能电池的光学性能评估
- 批准号:
16360312 - 财政年份:2004
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development of Selective Solar Absorber Coating by・ Stratified Integration of Mesoscopic Structures
通过介观结构的分层集成开发选择性太阳能吸收涂层
- 批准号:
14550651 - 财政年份:2002
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Improvement in Systematized Photo-thermoelectric Energy Conversion Film by Controlling Mesoscopic Film Structure
通过控制介观薄膜结构改进系统化光热电能量转换薄膜
- 批准号:
12650658 - 财政年份:2000
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Control of magnetic properties of Invar alloy by using giant stress in thin films.
利用薄膜中的巨大应力控制因瓦合金的磁性能。
- 批准号:
08650765 - 财政年份:1996
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Formation of nanoconstriction in thin insulating films by applying electric field.
通过施加电场在绝缘薄膜中形成纳米收缩。
- 批准号:
06650723 - 财政年份:1994
- 资助金额:
$ 2.18万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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- 批准号:
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Development of functionally graded DNA films containing cytokines eliciting bone formation
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