Formation of nanoconstriction in thin insulating films by applying electric field.

通过施加电场在绝缘薄膜中形成纳米收缩。

• 批准号: 06650723
• 负责人: ISHIGURO Takashi
• 金额: $ 1.47万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650723/
• 关键词: Field Evapolation; Quantum Wire; Thin Film; Insulating Thin Film; Quantum Effect

Metal (Al)/insulator (SiO_2 and/or MgO)/metal (Au) stacking structure with thin (5-20nm) insulating films have been fabricated. The electrically insulating state changes into conductive state by applying d.c. voltage.The threshold voltage from insulating state to conductive state (V_t) has been measured as a function of the thickness for SiO_2 (t_<SiO2>) and MgO (t_<MgO>) films, respectively. Results are as follows : for SiO2 films, V_t [V] =0.7 [V/nm] ・t_<SiO2> [nm], and for MgO films, V_t [V] =0.44 [V/nm]・t_<MgO> [nm].The Au anodic surfaces before and after applying field have been observed using scanning tunneling microscope (STM). The morphology on the Au anodic surface changed for the each process to form nanoconstrictions in the insulating films. Present experiment revealed the fact that the electrical change in the MIM structure form insulating to conducting related the formation of nanoconstriction due to the deformation of the surface of anodic material.

制备了具有薄（5-20​​nm）绝缘膜的金属（Al）/绝缘体（SiO_2和/或MgO）/金属（Au）堆叠结构，通过施加直流电压将电绝缘状态转变为导电状态。测量了 SiO_2 (t_<SiO2>) 和 MgO 的绝缘态到导电态 (V_t) 与厚度的函数关系(t_<MgO>) 膜的结果分别如下：对于 SiO2 膜，V_t [V] =0.7 [V/nm] ·t_<SiO2> [nm]，对于 MgO 膜，V_t [V] =0.44 [V/nm]·t_<MgO> [nm]。使用扫描隧道显微镜（STM）观察了施加场之前和之后的Au阳极表面的形貌。 Au阳极表面在绝缘膜中形成纳米收缩的每个过程中都发生变化，目前的实验表明，由于阳极材料表面的变形，MIM结构中从绝缘到导电的电变化与纳米收缩的形成有关。

项目成果

Y.Misaki, A.Saito, and K.Hamasaki: "Crossover of Noise in Superconducting Mesoscopic Devices." Extended Abst. of the 1995 Int'l Conf. on Solid State Devices and Materials.407-409 (1995)

Y.Misaki、A.Saito 和 K.Hamasaki：“超导介观器件中的噪声交叉”。

T.Ishiguro et al.: "STM observation of nanoconstriction in thin insulating films formed by applying electric field." J.Appl.Phys.(submitted).

T.Ishiguro 等人：“通过施加电场形成的绝缘薄膜中纳米收缩的 STM 观察。”

A.Takada, T.Ikuta, A.Tachibana, T.Fukumoto, M.Hatle, and K.Hamasaki: "Quasiparticle Characteristics and Noise Properties of Superconductor-Normal Metal-Superconductor Quantum Wall Devices." Jpn. J.Appl. Phys.34. 1401-1404 (1995)

A.Takada、T.Ikuta、A.Tachibana、T.Fukumoto、M.Hatle 和 K.Hamasaki：“超导-普通金属-超导量子壁器件的准粒子特性和噪声特性”。

H.Abe, K.Hamasaki, and T.Ishiguro: "Fabrication of Superconducting Quantum Interference Device with Thin-Film Quantum Point Contacts" Jpn. J.Appl. Phys.33. 7210-7213 (1994)

H.Abe、K.Hamasaki 和 T.Ishiguro：“采用薄膜量子点接触的超导量子干涉装置的制造”Jpn。

A.Takada et al.: "Quasiparticle Characteristics and Noise Properties of Superconductor-Normal Metal-Superconductor Quantum Well Devices." Jpn. J.Appl. Phys.34. 1401-1404 (1995)

A.Takada 等人：“超导-普通金属-超导量子阱器件的准粒子特性和噪声特性”。