Fabrication and Characterization of Vacuum Nano Electron Source by in-situ Beam Processing

原位束流加工真空纳米电子源的制备和表征

基本信息

批准号：
10450138
负责人：
TAKAI Mikio
金额：
$ 7.87万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450138/
关键词：
nanometer-sized electron sources vacuum micro electronics field emission array (FEA)in-situ beam processing focused ion beam (FIB)chemical reaction by electron beam dual beam process Fowler-Nordheim plots 電子ビーム支援科化学反応極微冷陰極電界放出電子源 /

项目摘要

Nanometer-sized electron sources for application to vacuum micro electronics, i.e., field emission array (FEA),have been fabricated using in-situ beam processing without a mask process. Gate opening with a diameter of about 100 nm down to 50 nm was fabricated using physical sputtering by a focused ion beam (FIB). A sharp Pt or carbon cathode pillar with a tip radius than 5 nm was fabricated using chemical reaction by electron beam irradiation in a flowing gas atmosphere. Characterization of both a single emitter and FEA was done by I-V characteristics and Fowler-Nordheim plots.Following results were obtained ;(1) In-Situ fabrication of nanometer-sized electron sourcesNanometer-sized electron sources or field emitters were fabricated using dual beam (FIB and electron beam) processing. Gate opening was fabricated by physical sputtering using a 30 keV Ga FIB. Metal cathodes were fabricated by chemical reaction using electron beam irradiation in a chemical gas atmosphere.(2) Fabrication of a field emitter without a mask processFEAs were fabricated and the dual beam process using FIB and electron beams was optimized. Field emission from FEAs fabricated by this technique was observed.(3) Optimization of nanometer-sized FEAsProcess parameters were optimized and feasibility of this technique for the fabrication of nanometer-sized FEAs was confirmed.

用于真空微电子器件（即场发射阵列（FEA））的纳米级电子源已使用原位束处理制造，无需掩模工艺。使用聚焦离子束 (FIB) 物理溅射制造直径约 100 nm 至 50 nm 的栅极开口。通过在流动气体气氛中通过电子束照射进行化学反应，制备了尖端半径大于 5 nm 的尖锐 Pt 或碳阴极柱。通过I-V特性和Fowler-Nordheim图对单个发射器和FEA进行了表征。得到了以下结果;（1）纳米尺寸电子源的原位制造使用双束（ FIB 和电子束）处理。使用 30 keV Ga FIB 通过物理溅射制造栅极开口。在化学气体气氛中利用电子束辐照通过化学反应制备金属阴极。(2)无掩模工艺场发射体的制备制备FEA并优化FIB和电子束的双束工艺。观察了采用该技术制备的有限元组件的场发射情况。(3)纳米级有限元组件的优化优化了工艺参数，证实了该技术用于制备纳米级有限元组件的可行性。