Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization

使用束辅助加工制造场发射器阵列及其稳定性

• 批准号: 12135205
• 负责人: TAKAI Mikio
• 金额: $ 21.44万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12135205/
• 关键词: nanometer-sized field emission electron source; cathode; dual beams; electron emission; field emitter array; UV laser cleaning; cabon nanotube (CNT); electron emission site; 電界放出電子源; 電子源の高輝度化; 電子源の安定化; FED; ディスプレイ; 陰極材料; 真空マイクロエレクトロニクス; 超微構

A fabrication process of a nanometer-sized field emission electron source and its arrays using focused electron and ion beams (dual beams) with beam diameters of down to a few nanometers combined with metal-organic gas species has been developed. Pt based gate and emitter structures together with insulating hayers have been fabricated for a several to hundreds seconds. The nanometer-sized emitters worked as field emitters with an emission current of up to 1 uA/tip. A minimum feature size of down to 10 nm with Pt and insulating layer could be obtained only by electron-induced deposition processes, which realized a nanometer-sized field emitter and its arrays. A nanometer-gapped emitter could be fabricated using electron beam induced processes for future experiment on electron interference for emitted electrons from nanometer-gapped emitters.A laser cleaning technique using ultra-violet (UV) wavelength has been developed for Spindt-type and Si-type field emitter arrays. The laser irradiation with a wavelength of 350 nm resulted in improvement in electron emission, while visible and/or shorter-wavelength such as 300 mn did not improve the emission behavior. The desorption of water components was found to be removed from field emitter arrays by laser clearning.The number of electron emission site in carbon nanotube (CNT) cathodes was found to be controlled by UV laser or low energy electron irradiation. The UV laser irradiation to printed CNT cathodes resulted in the enhancement of electron emission by four orders of magnitude and a homogeneous emission pattern was observed at a phosphor screen on the anode. the working vacuum for CNT cathodes

使用聚焦电子和离子束（双光束）的纳米尺寸场发射电子源及其阵列的制造过程已开发出与金属有机气体的束直径向下至几纳米的束直径。基于PT的栅极和发射极结构以及绝缘干草瓶已经制造了几百秒钟。纳米尺寸的发射器充当现场发射器，发射电流高达1 UA/尖端。使用PT和绝缘层的最小特征大小低至10 nm，只能通过电子诱导的沉积过程获得，该过程实现了纳米尺寸的场发射器及其阵列。可以使用电子束诱导的工艺来制造纳米散发发射极的发射极，以实现从纳米胶流发射器中发射的电子的电子干扰。一种使用Ultra-Violet（UV）波长的激光清洁技术是针对SPINDT-TYPE和SI-SI-TYPE现场Emitter阵列开发的。波长为350 nm的激光照射可改善电子发射，而可见和/或较短波长（例如300 MN）并不能改善发射行为。发现水成分的解吸是通过激光清除从现场发射极阵列中去除的。发现碳纳米管（CNT）阴极中的电子发射位点的数量通过紫外线激光或低能电子辐照控制。对印刷CNT阴极的紫外线激光照射导致电子发射通过四个数量级增强，并且在阳极上的磷光屏幕上观察到均匀的发射模式。 CNT阴极的工作真空

项目成果

C.Ochiai: "Fabrication Process of Field Emitter Arrays Using Focused Ion and Electron Beam Induced Reaction"J.Vac.Sci.Technl.. B19(in press). (2001)

C.Ochiai：“使用聚焦离子和电子束诱导反应的场发射器阵列的制造过程”J.Vac.Sci.Technl.. B19（印刷中）。

T.Shiroishi, T.Sawada, A.Hosono, S.Nakata, Y.Kanazawa, M.Takai: "Low Temperature Growth of Carbon Nanotube by Thermal CVD with FeZrN Catalyst"J. Vac Sci. & Technol., in press. B. (2004)

T.Shiroishi、T.Sawada、A.Hosono、S.Nakata、Y.Kanazawa、M.Takai：“使用 FeZrN 催化剂通过热 CVD 低温生长碳纳米管”J。

C.Ochai: "Fabrication Process of Field Emitter Arrays Using Focused Ion and Electron Beam Induced Reaction"J.Vac.Sci.Technl.. B19. 933-935 (2001)

C.Ochai：“使用聚焦离子和电子束诱导反应的场发射器阵列的制造过程”J.Vac.Sci.Technl.. B19。

K.Murakami: "Fabrication of Nano Electron Source Using Beam Assisted Process"to be published in Jpn. J. Appl. Phys.. (In press). (2003)

K.Murakami：“使用束辅助工艺制造纳米电子源”将在日本出版。

C.Ochiai: "Wedge Emitter Fabrication Using Focused Ion Beam"J.Vac.Sci.Technl.. B19,No.3. 904-906 (2001)

C.Ochiai：“使用聚焦离子束制造楔形发射器”J.Vac.Sci.Technl.. B19，No.3。