Fabrication of Field Emitter Arrays Using Beam Assisted Processing and Their Stabilization

使用束辅助加工制造场发射器阵列及其稳定性

基本信息

批准号：
12135205
负责人：
TAKAI Mikio
金额：
$ 21.44万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research on Priority Areas
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12135205/
关键词：
nanometer-sized field emission electron source cathode dual beams electron emission field emitter array UV laser cleaning cabon nanotube (CNT)electron emission site 電界放出電子源電子源の高輝度化電子源の安定化 FED ディスプレイ陰極材料真空マイクロエレクトロニクス超微構

项目摘要

A fabrication process of a nanometer-sized field emission electron source and its arrays using focused electron and ion beams (dual beams) with beam diameters of down to a few nanometers combined with metal-organic gas species has been developed. Pt based gate and emitter structures together with insulating hayers have been fabricated for a several to hundreds seconds. The nanometer-sized emitters worked as field emitters with an emission current of up to 1 uA/tip. A minimum feature size of down to 10 nm with Pt and insulating layer could be obtained only by electron-induced deposition processes, which realized a nanometer-sized field emitter and its arrays. A nanometer-gapped emitter could be fabricated using electron beam induced processes for future experiment on electron interference for emitted electrons from nanometer-gapped emitters.A laser cleaning technique using ultra-violet (UV) wavelength has been developed for Spindt-type and Si-type field emitter arrays. The laser irradiation with a wavelength of 350 nm resulted in improvement in electron emission, while visible and/or shorter-wavelength such as 300 mn did not improve the emission behavior. The desorption of water components was found to be removed from field emitter arrays by laser clearning.The number of electron emission site in carbon nanotube (CNT) cathodes was found to be controlled by UV laser or low energy electron irradiation. The UV laser irradiation to printed CNT cathodes resulted in the enhancement of electron emission by four orders of magnitude and a homogeneous emission pattern was observed at a phosphor screen on the anode. the working vacuum for CNT cathodes

已经开发出一种纳米级场发射电子源及其阵列的制造工艺，该工艺使用束流直径小至几纳米的聚焦电子束和离子束（双束）并结合金属有机气体物质。 Pt 基栅极和发射极结构以及绝缘层的制造过程需要几秒到几百秒的时间。纳米尺寸的发射器用作场发射器，发射电流高达 1 uA/尖端。只有通过电子诱导沉积工艺才能获得具有 Pt 和绝缘层的最小特征尺寸低至 10 nm，从而实现了纳米尺寸的场发射器及其阵列。可以使用电子束诱导工艺来制造纳米间隙发射器，以便将来对纳米间隙发射器发射的电子进行电子干涉实验。已经开发了一种使用紫外线（UV）波长的激光清洁技术，用于 Spindt 型和 Si-型场发射体阵列。波长为 350 nm 的激光照射导致电子发射的改善，而可见光和/或更短波长（例如 300 nm）并没有改善发射行为。研究发现，通过激光清除，可以从场发射体阵列中去除水成分的解吸。碳纳米管（CNT）阴极中电子发射位点的数量可以通过紫外激光或低能电子照射来控制。紫外激光照射印刷的碳纳米管阴极导致电子发射增强四个数量级，并且在阳极的荧光屏上观察到均匀的发射图案。 CNT 阴极的工作真空