Atomic-Level Control of SiC and Device Applications

SiC 的原子级控制和器件应用

基本信息

批准号：
08044143
负责人：
MATSUNAMI Hiroyuki
金额：
$ 1.34万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1996
资助国家：
日本
起止时间：
1996 至无数据
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08044143/
关键词：
Silicon Carbide Widegap semiconductor Epitaxial Growth Mos Transitor Schottky Barrier

项目摘要

Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide bandgap. The wide bandgaps of SiC give the material very high breakdown field, about ten times higher than that of Si or GaAs. The energies of optical phonons in SiC are as high as 100-120meV,which leads tohigh saturated electron drift velocity (2x10^7 cm/s in 6H-SiC) and high thermal conductivity (4.9W/Kcm). These outstanding properties and controllable p- and n-type doping during crystal growth make SiC a very attractive semiconductor material. Chemical vapor deposition (CVD) of silicon carbide (SiC) on SiC {0001} substrates and device applications have been investigated. Polytype-controlled epitaxial growth of SiC,which utilizes step-flow growth on off-oriented SiC {0001} substrates(step-controlled epitaxy), isproposed, and the detailedgrowth mechanism is discussed. In step-controlled epitaxy, SiC growth is controlled by the diffusion of reactants in a stagnant layr. Critical growth conditions where the growth mode changes from step-flow to two-dimensional nucleation are predicted as a function of growth conditions using a model describing SiC growth on vicinal {0001} substrates. Step bunching on the surfaces of SiC epilayrs, nucleation, and step-dynamics are also investigated. High quality of SiC epilayrs was elucidated through low-temperature photoluminescence, Hall effect, and deep level measurements. Excellent doping controllability in the wide range has been obtained by in-situ doping of a nitrogen donor and aluminum/boron acceptors. Recent progress in SiC device fabrication using step-controlledepitaxial layrs is studied. Intrinsic potential of SiC has been demonstrated in the excellent performance of high-power, high-frequency, and high-temperature SiC devices, which will exploit novel electronics.

碳化硅（SiC）是一种宽禁带IV-IV族化合物半导体材料。 SiC 的宽带隙赋予该材料非常高的击穿电场，大约比 Si 或 GaAs 高十倍。 SiC中的光学声子能量高达100-120meV，这导致了高饱和电子漂移速度（6H-SiC中为2x10^7 cm/s）和高热导率（4.9W/Kcm）。这些出色的性能以及晶体生长过程中可控的 p 型和 n 型掺杂使 SiC 成为非常有吸引力的半导体材料。对碳化硅 (SiC) 在 SiC {0001} 衬底上的化学气相沉积 (CVD) 和器件应用进行了研究。提出了在偏向SiC{0001}衬底上采用步进流生长（步进控制外延）的SiC多型控制外延生长方法，并讨论了详细的生长机制。在步进控制外延中，SiC 生长是通过静止层中反应物的扩散来控制的。使用描述邻近 {0001} 衬底上 SiC 生长的模型，将生长模式从阶梯流变为二维成核的关键生长条件预测为生长条件的函数。还研究了 SiC 外延层表面的阶梯聚束、成核和阶梯动力学。通过低温光致发光、霍尔效应和深能级测量阐明了 SiC 外延层的高质量。通过氮供体和铝/硼受体的原位掺杂，获得了宽范围内优异的掺杂可控性。研究了使用步进控制外延层制造 SiC 器件的最新进展。 SiC 的内在潜力已在高功率、高频和高温 SiC 器件的优异性能中得到体现，这些器件将开发新型电子器件。