Application of Wide Bandgap Semiconductor SiC for Power Devices

宽禁带半导体SiC在功率器件中的应用

• 批准号: 06555095
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 11.52万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555095/
• 关键词: Silicon Carbide; Power Device-; Thermal Oxidation; Ion Implantation; MOSFET; Schottky Barrier Diode; pn Junction Diode; 価電子制御

SiC is a promising semiconductor for advanced power device applications owing to its outstanding properties. Thermal oxidation and fabrication of fundamental SiC devices using high-quality epilayrs were investigated.Thermal oxides of SiC have very high resistivity of 5x10^<16>OMEGAcm and break-down field of 9.6MV/cm. The interface state density, which was estimated from the capacitance-voltage characteristics of MOS diodes, was 5x10^<10> cm^<-2>eV^<-1> for n-type SiC and 4x10^<11>cm^<-2>eV^<-1> for p-type SiC.The pn junction diodes formed by N ion implantation and epitaxial growth exhibited high breakdown voltages of 615V and 1720V,respectively. By employing edge termination utilizing B ion implantation, the reverse characteristics of SiC Schottky rectifiers were significantly improved. An excellent SiC Schttky rectifier with a 1750V breakdown voltage and a 5mOMEGAcm^2 on-resistance was realized. Inversion-type n-channel SiC MOSFET showed very good characteristics with a transconductance of 1.0mS/mm.

SiC 因其出色的性能而成为先进功率器件应用的一种很有前途的半导体。研究了热氧化和使用高质量外延层制造基本SiC器件。SiC热氧化物具有5x10^16OMEGAcm的极高电阻率和9.6MV/cm的击穿场。根据MOS二极管的电容-电压特性估算出的界面态密度，n型SiC为5x10^<10>cm^<-2>eV^<-1>，n型SiC为4x10^<11>cm^< p型SiC的-2>eV^<-1>。通过N离子注入和外延生长形成的pn结二极管表现出615V的高击穿电压和分别为1720V。通过采用B离子注入的边缘终止，SiC肖特基整流器的反向特性得到显着改善。实现了击穿电压为 1750V、导通电阻为 5mOMEGAcm^2 的优秀 SiC 施特基整流器。反型n沟道SiC MOSFET表现出非常好的特性，跨导为1.0mS/mm。

项目成果

Hiroyuki Matsunami: "High-Quality 4H-SiC Homoepitaxial Layers Grown by Step-Controlled Epitaxy" Appl.Phys.Lett.65. 1400-1402 (1994)

Hiroyuki Matsunami：“通过步进控制外延生长的高质量 4H-SiC 同质外延层”Appl.Phys.Lett.65。

H. Matsunami: "Nitrogen ion implantation into 6H-SiC and application to high-temperature, radiation-hard diodes" Jpn. J. Appl. Phys.34. 3036-3042 (1995)

H. Matsunami：“氮离子注入 6H-SiC 及其在高温、抗辐射二极管中的应用”Jpn。

Tsunenobu Kimoto: "Surface Kinetics of Adatoms in Vapor Phase Epitaxial Growth of SiC on 6H-SiC{0001}Vicinal Surfaces" J.Appl.Phys.75. 850-859 (1994)

Tsunenobu Kimoto：“6H-SiC{0001}邻位表面上 SiC 气相外延生长中吸附原子的表面动力学”J.Appl.Phys.75。

H. Matsunami: "Ion-implantation into α-SiC epilayers and application to high-temperature, high-voltage devices" Proc. 22nd Int. Sympo. on Compound Semiconductors. (印刷中). (1996)

H. Matsunami：“α-SiC 外延层的离子注入及其在高温、高压器件中的应用”，第 22 届国际化合物半导体研讨会（1996 年）。

H.Matsunami: "Efficient power Schottky rectifiers of 4H-SiC" Proc.7th Int.Sympo.on Power Semiconductor Devices and IC's. 101-106 (1995)

H.Matsunami：“4H-SiC 的高效功率肖特基整流器”Proc.7th Int.Sympo.on 功率半导体器件和 IC。