Microscopic analysis on surface reaction induced by laser irradiation and its application to atomic layr epitaxy

激光辐照引起的表面反应的显微分析及其在原子层外延中的应用

• 批准号: 06452111
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 4.61万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452111/
• 关键词: MOMBE; Photo-chemical reaction; Surface reaction; Photo-induced ALE; In-situ observation; RHEED; GaP; Saturated adsorption; 反射高速電子線回折法; 光励起プロセス; 原子層エピタキシ-; 質量分析; 反射電子線回析; III-V族半導体

Control of GaP growth at the atomic-layr level has been achieved by laser-triggering in metalorganic molecular beam epitaxy (MOMBE) under a simultaneous supply of triethylgallium and thermally cracked PH_3. The growth rate of GaP was enhanced at low substrate temperatures by ultraviolet light emitted from a N_2 laser. The growth rate is controlled by either the TEGa supply between laser pulses or the photon number, and it shows saturation with a high TEGa supply. This suggests that the adsorption of TEGa on a surface saturates.Surface reactions triggered by pulsed laser irradiation for GaP growth were studied with reflection high-energy electron diffraction (RHEED) at a low temperature of 350ﾟC IN MOMBE.On the laser irradiation, the intensity of RHEED showed an abrupt decrease followed by gradual recovery. The abrupt decrease indicates that adsorbed TEGa on a GaP surface is photo-decomposed by the laser irradiation. The intensity recovery had much dependence on PH_3 flow rate, which indicates that the intensity recovery is related with surface reaction between photo-decomposed TEGa and P atoms. This result shows that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source geses. This opens up a new mode of ALE triggered by laser irradiation without alternate supply of source gases.

在同时供应三乙基镓和热裂解PH_3的情况下，通过激光触发金属有机分子束外延（MOMBE）实现了原子层水平的GaP生长控制。紫外光在低衬底温度下提高了GaP的生长速率。从 N_2 激光器发射的生长速率由激光脉冲之间的 TEGa 供应或光子数控制，并且在高 TEGa 供应下表现出饱和。这表明TEGa在表面上的吸附饱和。在MOMBE中，在350°C的低温下，利用反射高能电子衍射(RHEED)研究了脉冲激光照射引发的GaP生长的表面反应。 RHEED 的强度呈现出突然降低然后逐渐恢复的趋势，这表明 GaP 表面上吸附的 TEGa 被激光光分解。强度恢复与PH_3流量有很大的依赖性，这表明强度恢复与光分解的TEGa和P原子之间的表面反应有关。该结果表明TEGa在激光照射下发生分解并形成GaP。这开辟了一种由激光照射触发的 ALE 无需交替供应源气体的新模式。

项目成果

M. Yoshimoto: "In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaP" Applied Surface Science. 79/80. 227/231 (1994)

M. Yoshimoto：“激光触发化学束外延 GaP 表面反应的原位 RHEED 观察”应用表面科学。

Hiroyuki Matsunami: "In-situ Reflection High-Energy Electron Diffraction Observation of Laser-Triggered Gap Growth in Chemical Beam Epitaxy" J.Crystal Growth. 136. 89-93 (1994)

Hiroyuki Matsunami：“化学束外延中激光触发间隙生长的原位反射高能电子衍射观察”J.Crystal Growth。

Hiroyuki Matsunami: "In-situ RHEED Observation on Surface Reactions in Laser-Triggered Chemical Beam Epitaxy of Gap" Appl.Surface Science. 79/80. 227-231 (1994)

Hiroyuki Matsunami：“激光触发化学束间隙外延表面反应的原位 RHEED 观察”Appl.Surface Science。

M. Yoshimoto: "Laser decomposition of surface adsorbed metalorganics in MOMBE" Transaction Materials Research Society, Japan. 19A. 163-166 (1994)

M. Yoshimoto：“MOMBE 中表面吸附金属有机物的激光分解”，日本材料研究学会交易。

M.Yoshimoto: "In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaP" Applied Surface Science. 79/80. 227-231 (1994)

M.Yoshimoto：“激光触发化学束外延 GaP 表面反应的原位 RHEED 观察”应用表面科学。