Microscopic analysis on surface reaction induced by laser irradiation and its application to atomic layr epitaxy

激光辐照引起的表面反应的显微分析及其在原子层外延中的应用

• 批准号: 06452111
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 4.61万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452111/
• 关键词: MOMBE; Photo-chemical reaction; Surface reaction; Photo-induced ALE; In-situ observation; RHEED; GaP; Saturated adsorption; 反射高速電子線回折法; 光励起プロセス; 原子層エピタキシ-; 質量分析; 反射電子線回析; III-V族半導体

Control of GaP growth at the atomic-layr level has been achieved by laser-triggering in metalorganic molecular beam epitaxy (MOMBE) under a simultaneous supply of triethylgallium and thermally cracked PH_3. The growth rate of GaP was enhanced at low substrate temperatures by ultraviolet light emitted from a N_2 laser. The growth rate is controlled by either the TEGa supply between laser pulses or the photon number, and it shows saturation with a high TEGa supply. This suggests that the adsorption of TEGa on a surface saturates.Surface reactions triggered by pulsed laser irradiation for GaP growth were studied with reflection high-energy electron diffraction (RHEED) at a low temperature of 350ﾟC IN MOMBE.On the laser irradiation, the intensity of RHEED showed an abrupt decrease followed by gradual recovery. The abrupt decrease indicates that adsorbed TEGa on a GaP surface is photo-decomposed by the laser irradiation. The intensity recovery had much dependence on PH_3 flow rate, which indicates that the intensity recovery is related with surface reaction between photo-decomposed TEGa and P atoms. This result shows that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source geses. This opens up a new mode of ALE triggered by laser irradiation without alternate supply of source gases.

通过简单的三乙基gallium和热破裂的pH_3供应，可以通过激光触发金属有机分子束外延（MOMBE）来控制原子 - 莱水平的间隙生长。通过N_2激光发出的紫外线在低底物温度下的间隙增长速率提高。生长速率受激光脉冲或光子数之间的TEGA供应控制，并且显示出较高的TEGA供应。这表明TEGA对表面饱和的吸附。脉冲激光照射触发的间隙生长引起的表面反应在350°C的低温下进行了反射高能电子衍射（RHEED）。突然减少表明在间隙表面上吸附的TEGA是由激光照射对图片进行的。强度恢复对PH_3流量的依赖性很大，这表明强度恢复与照片分解的TEGA和P原子之间的表面反应有关。该结果表明，通过激光照射对TEGA的分解，而间隙的形成也发生在源GES的连续供应下。这打开了一种新的ALE模式，该模式是由激光照射触发的，而无需替代源气体的供应。

项目成果

M. Yoshimoto: "In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaP" Applied Surface Science. 79/80. 227/231 (1994)

M. Yoshimoto：“激光触发化学束外延 GaP 表面反应的原位 RHEED 观察”应用表面科学。

Hiroyuki Matsunami: "In-situ Reflection High-Energy Electron Diffraction Observation of Laser-Triggered Gap Growth in Chemical Beam Epitaxy" J.Crystal Growth. 136. 89-93 (1994)

Hiroyuki Matsunami：“化学束外延中激光触发间隙生长的原位反射高能电子衍射观察”J.Crystal Growth。

Hiroyuki Matsunami: "In-situ RHEED Observation on Surface Reactions in Laser-Triggered Chemical Beam Epitaxy of Gap" Appl.Surface Science. 79/80. 227-231 (1994)

Hiroyuki Matsunami：“激光触发化学束间隙外延表面反应的原位 RHEED 观察”Appl.Surface Science。

M. Yoshimoto: "Laser decomposition of surface adsorbed metalorganics in MOMBE" Transaction Materials Research Society, Japan. 19A. 163-166 (1994)

M. Yoshimoto：“MOMBE 中表面吸附金属有机物的激光分解”，日本材料研究学会交易。

M.Yoshimoto: "In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaP" Applied Surface Science. 79/80. 227-231 (1994)

M.Yoshimoto：“激光触发化学束外延 GaP 表面反应的原位 RHEED 观察”应用表面科学。