Physics and Application of Spin-Related Phenomena in Semiconductors

半导体中自旋相关现象的物理及其应用

• 批准号: 07305011
• 负责人: OHNO Hideo
• 金额: $ 2.82万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07305011/
• 关键词: Semiconductor quantum structures; Electron spin; III-V compound semiconductors; II-VI compound semiconductors; epitaxial growth; ferromagnetic materials; Quantum size effect; Exchange interaction; III-VI族化合物半導体; II-V族化合物半導体

Expermental as well as theoretical research on spin related phenomena in semiconductor quantum structures has been conducted in order to establish (1) fabrication processes of semiconductor quantum structures with pronounced spin effects.(2) understanding of the spin related phenomena in such structures, and (3) possible application of the semiconductor quantum structures using the new degree of freedom related to spin of electrons. Two Symposia named "Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors" were held at the Research Institute of Electrical Communication, Tohoku University on December 20-21,1995, and at the Sendai International Center on January 27-28,1997 in an effort to bridge the gap between the Semiconductor Materials and the Magnetic Materials. Following results are among those the research results obtained in the course of the present project.(1) Epitaxial growth of magnetic materials on Si(2) A new III-V based ferromagnetic diluted magnetic semiconductor, (GA,Mn)As(3) Control of exchange interaction among magnetic ions by semiconductor nanostructures(4) Experimental verification of the existence of free magnetic polarons

对半导体量子结构中自旋相关现象进行了实验和理论研究，以便建立（1）具有显着自旋效应的半导体量子结构的制造工艺。（2）了解此类结构中的自旋相关现象，以及（ 3）使用与电子自旋相关的新自由度的半导体量子结构的可能应用。分别于1995年12月20日至21日在东北大学电气通信研究所和1月27日至28日在仙台国际中心举行了两次名为“半导体中自旋相关现象的物理和应用研讨会”的研讨会， 1997 年，致力于弥合半导体材料和磁性材料之间的差距。本项目取得的研究成果如下：(1) Si上磁性材料的外延生长(2) 一种新型III-V基铁磁稀磁半导体，(GA,Mn)As(3)半导体纳米结构控制磁性离子间交换相互作用(4)自由磁极化子存在的实验验证

项目成果

F.Matsukura: "Growth and properties of (Ga, Mn) As : a new III-V diluted magnetic semiconductor" Applied Surface Science. (accepted for publication). (1997)

F.Matsukura：“(Ga, Mn) As 的生长和特性：一种新的 III-V 稀磁半导体”应用表面科学。

S.Takeyama,et al.: "Excitoh magnetophotoluminescence affected by maghetic polarors and alloy fluctuations in Cd_<1-x> Mnx Te" Phys.Rev.B. B52. 1444-1447 (1995)

S.Takeyama 等人：“受磁极器和 Cd_<1-x> Mnx Te 合金涨落影响的激发磁光致发光”Phys.Rev.B。

S.Adachi: "Ultrafast optical sampling spectroscopy of exciton dynamics in quantum wells" Prog.Crystal Growth and Charact.33. 3307-3310 (1996)

S.Adachi：“量子阱中激子动力学的超快光学采样光谱”Prog.Crystal Growth and Charact.33。

H.Ohno: "Mn-Based III-V Diluted Magnetic (Semimagnetic)Semiconductors" Materials Science Forum. 182-184. 443-450 (1995)

H.Ohno：“锰基 III-V 稀磁（半磁）半导体”材料科学论坛。

K.Akeura,M.Tanaka,et al.: "Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on si(001)substrates" Appl.Phys.Lett.67. 3349 (1995)

K.Akeura、M.Tanaka 等人：“通过分子束外延在 si(001) 衬底上生长外延铁磁 MnAs 薄膜”Appl.Phys.Lett.67。