Quantum Structure Long-wavelength Light Emitting Devices Using Heterojunction Energy Filters

使用异质结能量滤波器的量子结构长波长发光器件

• 批准号: 05555083
• 负责人: OHNO Hideo
• 金额: $ 7.1万
• 依托单位: TOHOKU UNIVERSITY (1994)Hokkaido University (1993)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555083/
• 关键词: compound semiconductor; quantum structure; subband; optical transition; long-wavelength light; InAs; GaAs; GaSb; サブバンド間遷移; エルAs; ヘテロ構造; 分子線エピタキシ; 共鳴トンネルダイオード

Research on the basic properties of the inter-subband optical transition in compound semiconductor quantum structures was carried out to gain the understanding required to realize long-wavelength light emitting devices utilizing the inter-subband optical transitions.The following two quantum structures were investigated theoretically and both are shown to be able to be used to realize long-wavelength LED's : (1) InAs/AlSb/GaSb quantum structures in which all the electrons pass through the structure undergo inter-subband transition, and (2) energy filter structures utilizing more mature AlGaAs/GaAs systems. Population inversion was also shown to be realized by the two structures even under the fast nonradiative relaxation by optical phonons.On the experimental side, AlGaAs/GaAs structures were grown and the inter-subband absorption under electric fields was measured to clarify the effect of electric field on the transition. It was found that the absorption energy shifted toward low energy when carrier concentration in the well was high, whereas it shifted toward high energy when carrier concentration was low (Stark shift).Experiments are under way to experimentally realize the LED's based on the inter-subband transitions in these structures.

进行了对化合物半导体量子结构中基本间光学跃迁的基本特性的研究，以获得实现使用长波长的发光装置所需的理解，以实现以下两个量子结构。在理论上研究了以下两个量子结构。该结构经历了补充间的过渡，（2）利用更多成熟的藻类/GAAS系统的能量滤波器结构。即使在光学声子的快速非辐射放松下，这两个结构也证明了种群反演。在实验侧，藻类/GAAS结构生长，并测量电场下的子带吸收以阐明电场对过渡的效果。发现当井中的载体浓度很高时，吸收能朝低能转移，而当载体浓度较低时，它朝高能转移（Stark Shift）。经验正在实验中，基于这些结构中的子带中的过渡，实验会实现LED。

项目成果

H.Ohno: "Intersubband Population Inversion in Tunneling Heterostructures" Trans.Mat.Res.Soc.of Japan. 19A. 47-52 (1994)

H.Ohno：“隧道异质结构中的子带间粒子数反演”Trans.Mat.Res.Soc.of Japan。

H.Ohno: "Intersubband Population Inversion in Tunneling Heterostructures" Trans.Mat.Res.Soc.of Japan. vol.19A. 47-52 (1994)

H.Ohno：“隧道异质结构中的子带间粒子数反演”Trans.Mat.Res.Soc.of Japan。

H.Ohno: "Inter-subband population inversion in tunneling heterostructures" Proc.of Int.Conf.on Advanced Materials. (掲載決定済).

H.Ohno：“隧道异质结构中的子带间粒子数反转”Proc.of Int.Conf.on Advanced Materials（已出版）。

H.Ohno: "Inter-Subband Population Inversion in Tunneling Heterostructures" Trans.materials.Research Soc.of Japan. 19A. 47-52 (1994)

H.Ohno：“隧道异质结构中的子带间粒子数反演” Trans.materials.Research Soc.of Japan。