Diluted Magnetic Semiconductor Based Memory Devices

基于稀磁半导体的存储器件

基本信息

批准号：
07555095
负责人：
OHNO Hideo
金额：
$ 5.31万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555095/
关键词：
III-V Compound Semiconductor III-V Diluted Magnetic Semiconductor Memory Device Molecular Beam Epitaxy (Ga, Mn)As Ferromagnetic Materials Diluted Magnetic Semiconductor

项目摘要

In order to asses the feasibility of memory devices based on ferromagnetic diluted magnetic semiconductors (DMS's)'study on III-V based ferromagnetic DMS's, its processing technology, memory devices structures has been carried out. The following results have been obtained.(1)New III-V based ferromagnetic DMS based on GaAs, (Ga, Mn)As, has been synthesized for the first time by low temperature molecular beam epitaxy (MBE). Maximum Mn mole fraction was found to be 0.071. X-ray diffraction study showed increase of lattice constant with increase of Mn mole fraction (vegard's law). This material may be suitable for the memory application since it can be easily integrated with existing III-V circuity.(2)Magnetization as well as magnetotransport measurements showed that (Ga, Mn)As is ferromagnetic ; the highest curie temperature so far obtained was 110K.Curie temperature is proportional to Mn mole fraction below 0.05.(3)Reversing the strain direction in (Ga, Mn)As by using InGaAs buffer layrs, it was shown that the easy axis can be made perpendicular to the sample plane. This is very important finding for the memory application using anomalous Hall effect for reading the information stored in memory.(4)From critical scattering and Curie temperature, it was found that the origin of ferromagnetism is RKKY interaction.(5)Processing technology for memory fabrication has been developed and memory elements were fabricated to study its potential for applicaitons.

为了评估基于铁磁稀释的磁性半导体（DMS）的记忆设备的可行性，对基于III-V的铁磁DMS的研究，其处理技术，已进行了存储设备结构。（1）基于GAAS（GA，MN）AS的新的基于III-V的新型铁磁DMS已首次由低温分子束支配（MBE）合成。 Maximum Mn mole fraction was found to be 0.071. X-ray diffraction study showed increase of lattice constant with increase of Mn mole fraction (vegard's law).该材料可能适用于内存应用，因为它可以轻松地与现有的III-V循环性集成。（2）磁化以及磁通转运测量表明，（GA，MN）和铁磁性一样；到目前为止获得的最高居里温度为110k。库里温度与低于0.05的Mn摩尔分数成正比。（3）通过使用Ingaas Buffer Layrs逆转（GA，MN）中的应变方向，证明易于轴可以是made perpendicular to the sample plane.这对于使用异常的霍尔效应来读取存储在存储器中的信息是非常重要的发现。（4）（4）从临界散射和居里温度中，发现铁磁性的起源是rkky的互动。（5）用于存储技术用于记忆技术的技术。 fabrication has been developed and memory elements were fabricated to study its potential for applicaitons.