STUDY ON GROWTH AND MATERIAL PROPERTIES OF METASTABLE NITRIDE ALLOY SEMICONDUCTORS

亚稳态氮化物合金半导体的生长及材料性能研究

基本信息

批准号：
06452107
负责人：
ONABE Kentaro
金额：
$ 5.38万
依托单位：
THE UNIVERSITY OF TOKYO
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06452107/
关键词：
NITRIDE ALLOY SEMICONDUCTOR GaPN ALLOY WIDEGAP COMPOUND SEMICONDUCTOR METASTABLE ALLOY SEMICONDUCTOR GALLIUM PHOSPHIDE GALLIUM NITRADE METALORGANIC VAPOR PHASE EPITAXY MOVPE

项目摘要

Growth and material properties of nitride alloy semiconductors of the type III-V-N,where GaPN alloy is the representative, have been investigated. This group of alloy semiconductors had been hard to grow due to their extreme immiscibility. The present research project achieved the following major results, which will lead to new technological applications.1.Growth of GaPN Alloys : The growth characteristics of GaPN alloy by metalorganic vapor phase epitaxy using dimethylhydrazine have been clarified. The alloy composition is much affected by the desorption of N atom species from growing surface. Based on these growth characteristics, GaPN alloys with the N concentration as much as 6% have been successfully attained.2.The Origin and Property of Radiative Levels : From optical measurements and analyzes like absorption, photoluminescence and excitation spectroscopies, the radiative levels have been found to originate from the quasi-localized levels formed in the density-of-states tails at the band edge. The relaxation process of excited carriers at low temperatures is governed by the radiative transitions via N-N pair levels for N concentrations below 1%, and by the relaxation to nonradiative and then to quasi-localized radiative levels for the N concentrations above 1%.3.Evolution of Band Edge with Increasing N Concentration : It has been that the band edge of GaPN alloys originates from the isolated-N levels in the host GaP crystal. The behavior of mobility edge for quasi-localized excitons has been clarified. These findings are much consistent with a theoretical calculation for the energy bands based on the tight-binding method, and suggest that the huge bowing in the composition dependence of the GaPN energy gap is an intrinsic property of GaPN as well as other related nitride alloys such as GaAsPN and InGaPN.

已经研究了IIII-V-N型氮化合金半导体的生长和材料特性，其中GAPN合金是代表。这组合金半导体由于其极端不混可能而难以增长。本研究项目取得了以下主要结果，这将导致新的技术应用。1。GAPN合金的生长：使用二甲基氢氮嗪的金属有机蒸气相互作用的GAPN合金的生长特征已被阐明。合金组成受到n原子从生长表面解吸的很大影响。 Based on these growth characteristics, GaPN alloys with the N concentration as much as 6% have been successfully attained.2.The Origin and Property of Radiative Levels : From optical measurements and analyzes like absorption, photoluminescence and excitation spectroscopies, the radiative levels have been found to originate from the quasi-localized levels formed in the density-of-states tails at the band edge.低温下激发载体的放松过程受n浓度低于1％的N-N对水平的辐射过渡，通过放松到非放射性的放松，然后通过n浓度超过1％的n浓度的准定位辐射水平。3。带边缘的流动n浓度增加，n浓度越来越高。已阐明了准定位激子的迁移率边缘的行为。这些发现与基于紧密结合方法的能带的理论计算非常一致，并表明GAPN能量差距的组成依赖性巨大的鞠躬是GAPN以及其他相关的氮化合金（例如GaASPN和Ingapn）的内在特性。