Study on Atomic Layer Epitaxy of Wide-Gap Compound Semiconductors by Metalorganic Vapor Phase Growth

金属有机气相生长宽禁带化合物半导体原子层外延研究

• 批准号: 01460071
• 负责人: ONABE Kentaro
• 金额: $ 4.74万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01460071/
• 关键词: Movpe; Widegap Compound Semiconductor; Atomic Layer Epitaxy; Gallium Nitride; Gallium Arsenide Phosphide; Structural Transformation; Visible-Light-Emitting Material; 青色発光半導体レ-ザ; 結晶構造交換

In this study, crystal growth and characterization of compound semiconductor GaAsP-related quantum wells and cubic GaN have been attemped. We have clarified the crystal growth features and the materials properties as the folowing.1) Strained-layer quantum well structures based on the GaAs/GaAsp and GaAsP/GaP heterostructures have been grown. From photoluminescence, infrared reflectance spectroscopy and photoreflectance measurements, the band discontinuity at the heterointerfaces has been determined, showing alloy composition and strain dependences.2) GaN has been successfully grown using dimethylhydrazine as the group V (N) element source. It has been show that the grown cubic GaN is superior in its crystal perfection. This is a realization of "structural transformation heteroepitaxy", which forms a new concept of epitaxial growth technology.For the next steps, further improvements in the growth method, characterization of other properties and atempts for photonic device applicatios are to be carried out.

在这项研究中，已经介入了与GAASP相关的量子井和立方GAN的晶体生长和表征。我们已经将晶体生长特征和材料特性阐明为循环。1）基于GAAS/GAASP和GAASP/GAP/GAP异质结构的紧张层量子井结构已被增长。从光致发光，红外反射率光谱和光质融合测量值中，已经确定了异质界面处的带不连续性，显示了合金组成和应变依赖性。2）2）GAN已使用Dimethylhydrazine成功地生长为V（N）元素源。已经表明，生长的立方gan的晶体完美效果优越。这是对“结构转化杂质的”的实现，它构成了外延生长技术的新概念。对于下一步，将进一步改进增长方法，其他属性的表征以及光子设备应用程序的ATEMPTS。

项目成果

X. Zhang, K. Onabe, Y. Nitta, B. P. Zhang, S. Fukatsu, Y. Shiraki and R. Ito: ""Optical Characterization of Band-Edge Discontinuities in GaAs/GaAs_<1-X>P_X Strained-Layer Quantum Wells"" Proc. 10th Alloy Semicond. Phys. and Electron. Symp.10. 343-350 (199

X. 张、K. Onabe、Y. Nitta、B. P. 张、S. Fukatsu、Y. Shiraki 和 R. Ito：“GaAs/GaAs_<1-X>P_X 应变层量子中带边不连续性的光学表征

Y.Nitta,K.Onabe,S.Fukatsu,Y.Shiraki and R.Ito: "Structural-Transformation Heteroepitaxy of GaN on GaAs by MOVPE" Tenth Record of Alloy Semiconductor Physics and Electronics Symposium. 10. 173-180 (1991)

Y.Nitta，K.Onabe，S.Fukatsu，Y.Shiraki和R.Ito：“MOVPE在GaAs上GaN的结构转变异质外延”合金半导体物理与电子学研讨会第十次记录。

H.Iwata,H.Yokoyama,M.Sugimoto,N.Hamao and K.Onabe: "Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures" Applied Physics Letters. 54. 2427-2428 (1989)

H.Iwata、H.Yokoyama、M.Sugimoto、N.Hamao 和 K.Onabe：“GaAs/AlGaAs 量子阱结构中超晶格缓冲层降低界面复合速度”应用物理快报。

Y. Nitta, K. Onabe, S. Fukatsu, Y. Shiraki and R. Ito: ""Structural-Transformation Heteroepitaxy of GaN on GaAs by MOVPE"" Proc. 10th Alloy Semicond. Phys. and Electron. Symp.10. 173-180 (1991)

Y. Nitta、K. Onabe、S. Fukatsu、Y. Shiraki 和 R. Ito：“通过 MOVPE 在 GaAs 上实现 GaN 的结构转变异质外延”Proc。

Y.Miura,K.Onabe,X.Zhang,Y.Nitta,S.Fukatsu,Y.Shiraki and R.Ito: "Compositional Latching in GaAs_<1ーx>P_x/GaAs Metalorganic" Japanese Journal of Applied Physics. 30. L664-L667 (1991)

Y. Miura、K. Onabe、X. Zhang、Y. Nitta、S. Fukatsu、Y. Shiraki 和 R. Ito：“GaAs_<1-x>P_x/GaAs Metalorganic 中的组合锁存”《日本应用物理学杂志》30。 L664-L667 (1991)