APPLICATION OF INTERMETALLIC COMPOUNDS TO FUNCTIONAL ELECTRONIC MATERIALS

金属间化合物在功能电子材料中的应用

• 批准号: 05402050
• 负责人: MURAKAMI Masanori
• 金额: $ 11.65万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05402050/
• 关键词: INTERMETALLIC COMPOUNDS; THIN FILMS; FUMCTIONAL MATERIALS; ELECTRONIC MATERIALS

Refractory NiGe Ohmic contacts which had excellent thermal stability and smooth surface had been developed. To apply this contacts to the future very large scale integration (VLSI) GaAs devices, reduction of the contact resistance (R_C) of the NiGe contacts are mandatory. In the present paper, in order to obtain a guideline for the R_C reduction, the formation mechanism of the NiGe contacts was investigated. The NiGe contacts were found to have two different Ohmic contact formation mechanisms. These mechanisms suggested that facilitation of heavy doping at the GaAs surface and/or in the Ge layr was very effective to reduce the R_C values of the NiGe contacts.

已经开发出具有出色的热稳定性和光滑表面的难治性nige欧摩型触点。为了将此接触应用于未来的非常大的集成（VLSI）GAAS设备，必须降低NIGE接触的接触电阻（R_C）。在本文中，为了获得减少R_C的指南，研究了NIGE接触的形成机制。发现NIGE接触具有两个不同的欧姆接触形成机制。这些机制表明，在GAAS表面和/或GE Layr中促进重掺杂非常有效地减少NIGE接触的R_C值。

项目成果

C.J.Uchibori: "The Formation Mechanism of the In_xGa_<1-x> As Ohmic Contacts to n-type GaAs Prepared by RF sputtering" J.Electronic Mater.23. 983-989 (1994)

C.J.Uchibori：“通过射频溅射制备的 n 型 GaAs 欧姆接触 In_xGa_<1-x> 的形成机制”J.Electronic Mater.23。

M. Okunishi: "Development of Ohmic contacts for compound semiconductors" J. Electro. Mat.24. 333-339 (1995)

M. Okunishi：“化合物半导体欧姆接触的发展”J. Electro。

M. Murakami: "Development of Ohmic contacts for compound semiconductors" Proc. Int. Conf. Solid and Integrated-Circuit Technology. 4. 374-378 (1995)

M. Murakami：“化合物半导体欧姆接触的开发”Proc。

T.Oku: "Thermal stability of WN_X and TaN_X diffusion barriers between Si and Cu" Proc.IEEE VLSI Multilevel Interconnection Conference. Vol.12. 182-185 (1995)

T.Oku：“Si 和 Cu 之间 WN_X 和 TaN_X 扩散势垒的热稳定性”Proc.IEEE VLSI 多级互连会议。

T.Oku: "Development of refactory NiGe-based Ohmic contacts to n-type GaAs" Inst.Phys.Conf.Ser.Vol.141. 721-726 (1995)

T.Oku：“基于 NiGe 的难熔欧姆接触与 n 型 GaAs 的开发”Inst.Phys.Conf.Ser.Vol.141。