Development of High Performance Ohmic Contact Materials for Full Color Light Enitting Devices.

用于全彩发光器件的高性能欧姆接触材料的开发。

基本信息

批准号：
08455145
负责人：
MURAKAMI Masanori
金额：
$ 4.99万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455145/
关键词：
GaN ZnSe Ohmic Contact Coutact Resistance Schottky Barrier GuN ZnSe 窒化ガリウム

项目摘要

In order to examine the possibility of preparing an non-reacted(non-alloyed)ohmic contacts to p-GaN,the effects of GaN surface treatments and work functions of the contact metals on the electrical properties between the metal contacts and p-GaN were investigated. A contamination layr consisting of GaO_x and adsorbed carbons was found on the GaN substrate grown by metalorganic chemical vapor deposition. The contamination layr was not completely removed by sputtering the GaN surface with Ar and N ions where the ion densities were -10-^2 muA/cm^2. Although the contamination layr was partially removed by immersing in a buffered HF solution, little improvement of the electrical properties of the GaN/metal interfaces was obtained. Most of the vontamination layr was removed by annealing the Ni and Ta contacts at temperatures close to 500ﾟC.These annealed contacts exhibited slightly enhanced current injection from the contact metal to the GaN.The present surface treatment study indicated that … More removal of the contamination layr did not significantly reduce the contact resistance. On the other hand, the resistance decreased exponentially with increasing the metal work functions, where Pt, Ni, Pd, Au, Cu, Ti, Al, Ta, and Ni/Au were deposited on the GaN.This result suggests that the Schottky barrier height at the p-GaN/metal interface might not be pinned at the GaN surface. The present study concluded that a contact metal with a large work function is desirable for non-reacted ohmic contacts to p-GaN.However, these contacts did not provide the law contact resistance required for blue laser diodes.In addition, Schottky barrier heights(SBH's)of a variety of metals(In, Cd, Nb, Ti, W,Cu, Ag, Au, Ni, Pt, and Se)contacting to p-ZnSe grown by a molecular beam epitaxy method were measured by an intenal photoemission, capacitance-voltage(C-V)、and/or current density-voltage(J-V)method. The internal photoemission method could not measure accurately the SBH's of these metals due to a strong interference of the monochromatic incident light in the p-ZnSe epilayr. The C-V method measured the SBH value of 1.23 eV for the Au contact and 1.13 eV for the Ni contact, but did not measure the SBH's of other metals due to strong hysteresis of the C-V curves. The SBH's of these metals were successfully measured by the J-V method to be 1.2(]SY.+-。[)0.1 eV.The present experiment showed that the SBH values were independent of the work functions of the contact metals, indicating that the Fermi-level could be pinned at the p-ZnSe/metal interface. In addition, turn-on voltages conventionally used to evaluate the electrical properties of the contact metals were found to be very sensitive to the SBH values. Less

为了检查制备与金属触点和p-gan之间电触点的p-gan离子的非反应（非合金）接触。通过溅射gan表面是-10-^ 2 MUA/cm^ 2。 C.这些退火的slighip略微增强了从接触金属到发送的表面处理研究的电流倾向表明，……更多的去除对面的人并未显着降低接触性，而阻力随着金属工作功能的增加而呈指数降低。 pt gan。这表明p-gan/金属面的壁垒高度可能固定在gan表面上。但是，这些接触没有提供蓝色激光二极管所需的法律接触电阻。此外，在各种金属（in，cd，cd，nb，w，pt和se）中的Schottky屏障高度（SBH）（SBH）接触到P- ZnSe通过和/或持续电压（C-V），CAPACE-电压（C-V）GE（J-V）方法。 -znse epilayr。方法为1.2（sy。+ - 。 [）0.1 ev。目前表明SBH值与接触金属无关，表明可以将p-ZNSE/金属界面固定在p-znse/金属界面上。发现对金属的特性对SBH值非常敏感。