Development of Ohmic contact materials for ZnSe-based blue light emitting devices

ZnSe基蓝光发射器件欧姆接触材料的开发

• 批准号: 05555003
• 负责人: MURAKAMI Masanori
• 金额: $ 5.18万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555003/
• 关键词: p-ZnSe; Ohmic contact; Schottky barrier height; deposition; annealing; Cd-based contact; metal interface; ZnSe; オーミック・コンタクト; 金属; 半導体界面; CdZnSe; アニール; 自然酸化膜; 仕事関数; Au,Nb,Cu,Ag,Ni; Cd基およびTe基; 窒素ラジカルドーピング; 分子線エピタキシー; Au; トンネル電流

In order to explore a possibility to prepare low resistance Ohmic contacts by the conventional deposition and annealing (DA) technique, the effects of the ZnSe surface cleaning and formation of an intermediate heterostructure on the electrical properties at the metal/semiconductor interface have been investigated for the N-doped p-ZnSe substrates grown by the molecular beam epitaxy (MBE) technique. The turn-on voltage (V_T) (corresponding to the breakdown voltage) was significantly reduced by cleaning the ZnSe surface in saturated bromine water (SBW) solution, which was found to be due to removal of the native oxide layr grown on the ZnSe surface. An addition of a small amount of Cd to the W contact reduced the V_T values of the W contacts from about 11 to 6 V.The microstructural analysis indicated the formation of the Cd_XZn_<1-x>Se layrs at the metal/ZnSe interface with Cd composition (x) larger than 0.9. From the present experiment, it was concluded that formation of the thin large-area Cd_xZn_<1-x>Se layrs is crucial to reduce the V_T value to nearly zero by the conventional DA technique.

为了探索通过传统沉积和退火（DA）技术制备低电阻欧姆接触的可能性，研究了ZnSe表面清洁和中间异质结构的形成对金属/半导体界面电性能的影响。通过分子束外延（MBE）技术生长的N掺杂p-ZnSe衬底。通过在饱和溴水（SBW）溶液中清洗ZnSe表面，开启电压（V_T）（对应于击穿电压）显着降低，这是由于去除了ZnSe表面上生长的原生氧化层所致。在 W 接触中添加少量 Cd 将 W 接触的 V_T 值从约 11 V 降低至 6 V。微观结构分析表明，在金属/ZnSe 界面处形成了 Cd_XZn_<1-x>Se 层Cd成分(x)大于0.9。从本实验得出的结论是，形成薄的大面积Cd_xZn_<1-x>Se层对于通过传统DA技术将V_T值降低到接近零至关重要。

项目成果

Y. Koide: "Cd-based Ohmic contact meterials to p-type ZnSe" J. Crystal Growth. (in press). (1996)

Y. Koide：“Cd 基欧姆接触材料与 p 型 ZnSe”J. 晶体生长。

O.Tadanaga, Y.Koide, K.Hashimoto, T.Oku, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Dependences of electrical properties on work functions of metals contacting to p-type ZnSe" Jpn.J.Appl.Phys.(in press). (1996)

O.Tadanaga、Y.Koide、K.Hashimoto、T.Oku、N.Teraguchi、Y.Tomomura、A.Suzuki 和 M.Murakami：“电性能对与 p 型 ZnSe 接触的金属的功函数的依赖性”

小出 康夫: "金属/ZnSe界面とオーミック・コンタクト" 日本金属学会誌「まてりあ」. 33. 738-743 (1994)

Yasuo Koide：“金属/ZnSe界面和欧姆接触”日本金属研究所杂志“材料”33. 738-743（1994）。

M.Murakami: "Mezo-scale Ohmic contact materials for compound semiconductors" J.Jpn Institute of Metals. vol.34. 987-991 (1995)

M.Murakami：“用于化合物半导体的中尺度欧姆接触材料”J.Jpn 金属研究所。

H.Ishikawa, K.Tsuki, Y.Koide, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Surface cleaning effects on electrical properties of Ni contacting to p-type ZnSe" J.Vac.Sci.& Technol.B (in press). (1996)

H.Ishikawa、K.Tsuki、Y.Koide、N.Teraguchi、Y.Tomomura、A.Suzuki 和 M.Murakami：“表面清洁对 Ni 与 p 型 ZnSe 接触的电性能的影响”J.Vac.Sci