Development of selective deposition technique of sillicon dioxideinto extremely fine patterned structure and its application to G-bit memory wiring

二氧化硅极精细图形结构选择性沉积技术的发展及其在G位存储器布线中的应用

• 批准号: 04555071
• 负责人: HIROSE Masataka
• 金额: $ 8.7万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04555071/
• 关键词: Plasma CVD; Silicon dioxide; FT-IR-ATR; Real time monitoring; Planarization technique; Selective growth technique; シリコン薄膜

A novel CVD technique of silicon dioxide with a very high fluidity has been developed for planarizing extremely fine patterned surfaces with narrow grooves or deep trenches. Silicon dioxide has been deposited by the glow discharge decomposition of SiH_4 and O_2 at substrate temperatures below-80ﾟC,where the thermal reaction on the surface was basically suppressed. When ion flux onto the growth surface was significantly reduced by employing a triode-type reactor, oxide deposition onto surfaces with narrow features proceeds from the bottom of a trench or groove and result in planarization of the topography. High-fluidity deposition of silicon dioxide was also achieved by employing a Si_2H_6 and O_2 plasma or a high partial pressure SiH_4 discharge generated in a diode-type reactor. It is shown that the polymerization reaction is promoted on the surface to form higher silane radicals with migration capability despite the ion irradiation to the growth film surface. This is presumably because the life time of polymerized species is controlled the condensation rate of higher silanes and ion-induced ablation/decomposition rate of surface products. Real time monitoring of surface reactions during deposition from siH_4 and O_2 plasma was performed by employing a newly developed FT-IR-ATR system. At temperature of -95ﾟC,polymerization reactions among adsorbates proceeds on the surface to form polysiloxene (O-SiH_2)_n chains partially terminated with SiH_3 or OH.

一种具有新型的CVD技术，用于使用Groo VES或深度TRENCA的硅化剂，用于平稳性地表面。躯干或凹槽，并通过使用Si_2h_6的高素质和高压效果，并在二极管型反应器中产生高压4的高压。通过对SIH_2的表面反应的ion辐射，形成了较高的硅烷自由基。多氧烯（O-SIH_2）_n链部分用SIH_3或OH终止。

项目成果

M.Hirose: "Science and Technology for Advanced ULSI Processes-Present and Future in Japan" Proc. of Third Intern. Conf. on Solid State and Integrated Circuit Technology. 14-17 (1992)

M.Hirose：“先进 ULSI 工艺的科学技术——日本的现在和未来”Proc。

S.Miyazaki: "Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon" Japanese Journal of Applied Physics. 34(to be published). (1995)

S.Miyazaki：“等离子体增强硅 CVD 过程中表面反应的实时监测”日本应用物理学杂志。

H.Shin: "High-Fluidity Chemical Vapor Deposition of Silicon Dioxide" Appl.Phys.Lett.2616-2618 (1992)

H.Shin：“二氧化硅的高流动性化学气相沉积”Appl.Phys.Lett.2616-2618 (1992)

S.Miyazaki: "Real Time Monitoring of Surface Reactions during Plasma Enhanced CVD of Silicon" Jpn. J. Appl. Phys.34. 787-790 (1995)

S.Miyazaki：“在硅的等离子体增强 CVD 过程中实时监测表面反应”Jpn。

M.Hirose: "A New Horizon of Plasma Enhanced CVD for Future Electron Devices" Extended Abstract of the 1992 Intern. Conf. on Solid State Devices and Materials. 13-16 (1992)

M.Hirose：“未来电子器件的等离子体增强 CVD 的新视野”1992 年实习生的扩展摘要。