Basic study of selective deposition by using excimer laser

准分子激光选择性沉积的基础研究

基本信息

批准号：
58420028
负责人：
HIROSE Masataka
金额：
$ 11.65万
依托单位：
Hiroshima University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1983
资助国家：
日本
起止时间：
1983 至 1985
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-58420028/
关键词：
excimer laser laser CVD intial uncleathion 選択CVD

项目摘要

Spatially selective deposition of thin films is one of key issues for future VLSI process technology. Laser-induced chemical vapor deposition (laser CVD) technique enables us to grow thin films on the specific area irradiated with laser light passing through a metal mask. The purpose of the present project is to develop direct pattern projection CVD technique by using an ArF excimer laser. In the experiment the laser beam was projected onto a quartz substrate through a free-standing metal mask with 100 <micro> m stripe pattern. The quartz substrate is exposed to a low pressure disilane ( <Si_2> <H_6> ) gas. Photochemical decomposition of adsorbed <Si_2> <H_6> occurs on the irradiated quartz surface. Hence initial silicon nuclei are produced on the surface and are strongly excited by incident photons. This results in rapid growth of the nuclei and thin layer deposition proceeds on the irradiated region. Consequently very clear pattern projection of silicon film is achieved on a quartz substrate. The spatial resolution of the pattern projection CVD is estimated to be better than 3 <micro> m by calculating the interference fringes measured as thickness fluctuations of the deposited silicon film. This newly developed CVD technique is based on purely photochemical process without involving any significant contribution of thermal reaction to deposition. This is the first experimental success in silicon selective deposition by photochemical process.

薄膜的空间选择性沉积是未来VLSI过程技术的关键问题之一。激光诱导的化学蒸气沉积（Laser CVD）技术使我们能够在特定区域上生长薄膜，并在激光光中通过金属面膜辐射。本项目的目的是通过使用ARF准分子激光来开发直接模式投影CVD技术。在实验中，激光束通过具有100 <micro> m条纹图案的独立金属掩模投射到石英底物上。石英底物暴露于低压驱烷（<si_2> <h_6>）气体。吸附的<si_2> <h_6>的光化学分解发生在辐照的石英表面上。因此，最初的硅核是在表面上产生的，并通过入射光子强烈激发。这会导致核和薄层沉积在辐照区域的快速生长。因此，在石英底物上实现了硅膜的非常清晰的图案投影。估计，通过计算为沉积硅膜的厚度波动测量的干扰条纹，估计模式投影CVD的空间分辨率优于3 micro> m。这种新开发的CVD技术基于纯光化学过程，而无需对沉积的热反应做出任何显着贡献。这是通过光化学过程选择性沉积的第一个实验成功。