Development of Process Technology for Semiconductor Surface Cleaning by Using VUV Photochemical Reactions

利用VUV光化学反应进行半导体表面清洗工艺技术的开发

基本信息

批准号：
59850052
负责人：
HIROSE Masataka
金额：
$ 12.93万
依托单位：
HIROSHIMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1984
资助国家：
日本
起止时间：
1984 至 1986
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-59850052/
关键词：
Photochemical Etching Vacuum Ultra-Violet Photochemical Reaction 真空紫外光

项目摘要

Thermally grown silicon dioxide (Si <O_2> ), crystalline Gallium Arsenide (GaAs) and silicon (Si) surfaces was exposed to an etching gas under an ArF excimer laser irradiation. The reaction products on the surface and their chemical bonding features were studied by in-situ x-ray photoelectron spectroscopy at each step of the photochemical etching. Reaction kinetics of photochemical etching and resulting products on the solid surfaces have been revealed from the chemical shifts of adsorbates and substrate atoms. Etching products in Si <O_2> /(N <F_3> + <H_2> ) system are confirmed to be Si <F_4> , <N_2> O, and N <O_2> . For the etching of GaAs in HCl, Ga <Cl_3> and As <Cl_3> are found to be the most probable products in the gas phase. The photoluminescence measurements and the current-voltage characteristics of the Schottky barrier diodes indicate that the surface-defect density of the photochemically-etched sample is as low as that of the conventional wet etching. In the case of the etching of Si in N <F_3> , it was found that Si <F_X> (1 <-!<> X <-!<> 4) units and molecular fluorine exist in the reacting surface region. The surface Si-Si bonds attacked with fluorine are progressively fluorinated and the final surface products are mainly Si <F_4> and Si <F_3> . A possible mechanism of fluorine etching is discussed on the basis of a valence electron transfer (VET) model.

将热生长的二氧化硅(Si<O_2>)、结晶砷化镓(GaAs)和硅(Si)表面在ArF准分子激光照射下暴露于蚀刻气体。通过原位X射线光电子能谱研究了光化学蚀刻每个步骤的表面反应产物及其化学键合特征。光化学蚀刻的反应动力学和固体表面上产生的产物已经从吸附物和基底原子的化学位移中揭示出来。确认Si<O_2>/(N<F_3>+<H_2>)体系中的蚀刻产物为Si<F_4>、<N_2>O、N<O_2>。对于在 HCl 中蚀刻 GaAs，发现 Ga <Cl_3> 和 As <Cl_3> 是气相中最可能的产物。肖特基势垒二极管的光致发光测量和电流-电压特性表明，光化学蚀刻样品的表面缺陷密度与传统湿法蚀刻的表面缺陷密度一样低。在N<F_3>中蚀刻Si的情况下，发现在反应表面区域中存在Si<F_X>(1<-!<>X<-!<>4)单元和分子氟。受氟攻击的表面Si-Si键逐渐氟化，最终表面产物主要为Si<F_4>和Si<F_3>。基于价电子转移（VET）模型讨论了氟蚀刻的可能机制。