Study on the Fundamental Mechanism of Radical Beam Epitaxy

自由基束外延基本机理研究

基本信息

批准号：
61420028
负责人：
HIROSE Masataka
金额：
$ 11.07万
依托单位：
HIROSHIMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1988
项目状态：
已结题

项目摘要

The objective of this research program is to develop a new epitaxial growth technique for lowering the epitaxial temperature by using a radical beam produced with a dc glow discharge or electron cyclotron resonance (ECR) plasma of a material gas. In order to obtain the fine silicon homoepitaxy at lower temperature and to realize low temperature surface cleaning prior to the epitaxial growth, neutral fragment of SiH_X radicals created by the discharge decomposition of SiH_4 are effused onto a c-Si (100) substrate placed on a ultra-high vacuum chamber. The results are summarized as follows:(1) Silicon epitaxial layers have been grown at temperatures as low as 550 ゜C by using a radical beam produced by the dc glow discharge of 15 % SiH_4 diluted with Ar. (2) When an adequate beam intensity of hydrogen radicals is irradiated on the growing surface, the epitaxial temperature is lowered down to 520 ゜C as a result of in situ removal of oxygen contamination on the surface. In case of irradiating the excess hydrogen radical beam, twin crystal or polycrystalline is formed because the overhydrogenation of surface silicon bonds interrupts the silicon network formation. For a low hydrogen beam intensity, oxygen contamination can not be effectively removed and hence polycrystalline phase appears. (3) SiH_X radical beam irradiation reduce the epitxial temperature to 400 ゜C presumably because ECR plasma effectively creates highly excited SiH_X radicals. (4) Irradiation of a suitable amount of SiH_X radicals from SiH_4 ECR plasma is quite beneficial remove the thin protective oxide formed on the substrate surface. Consequently clean Si surface is obtained at a temperature of 650 ゜C by the radical beam cleaning technique.

该研究计划的目标是开发一种新的外延生长技术，通过使用材料气体的直流辉光放电或电子回旋共振（ECR）等离子体产生的自由基束来降低外延温度，以获得精细的硅。为了在较低温度下进行同质外延并实现外延生长前的低温表面清洁，将SiH_4放电分解产生的SiH_X自由基的中性碎片喷射到c-Si上将(100)衬底置于超高真空室中，结果总结如下：(1)利用15℃的直流辉光放电产生的自由基束，在低至550℃的温度下生长了硅外延层。 % SiH_4 用 Ar 稀释 (2) 当足够的氢自由基束强度照射到生长表面时，外延温度降至 520 °C。由于原位去除表面上的氧污染，在照射过量的氢自由基束的情况下，由于表面硅键的过度氢化中断了硅网络的形成，因此形成双晶或多晶。 (3)SiH_X自由基束辐照可能由于ECR而将外延温度降低至400℃。 (4) 在 650 °C 的温度下，SiH_4 ECR 等离子体照射适量的 SiH_X 自由基可以非常有效地去除衬底表面上形成的薄保护氧化物。自由基束清洁技术。