Estimation of Thermal Stress During Growth Process of Bulk Single Crystals used in Electronic Devices

电子器件用块状单晶生长过程中的热应力估算

基本信息

批准号：
02650074
负责人：
MIYAZAKI Noriyuki
金额：
$ 0.9万
依托单位：
Kyushu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

项目摘要

Thermal stress analyses of Si, GaAs and InP bulk single crystals during Czochralski growth were performed in the cases of the[001] and[111] pulling directions by using a three-dimensional finite element program. Elastic anisotropy was taken into account in this program. The stress components obtained from the thermal stress analysis were converted into the parameter sigma_<tot> representing the effective stress for glide strains. The values and distribution patterns of sigma_<tot> were compared between the anisotropic analysis and the isotropic analysis using the Young's modulus and the Poisson's ratio in the (111) plane. The following were obtained. (1) In the case of the[001] pulling direction, the isotropic analysis provides larger sigma_<tot> values than the anisotropic analysis. (2) In the case of the[1111 pulling direction, the difference between the results obtained from both analyses consists in the distribution patterns of sigma_<tot> rather than in its values.Thermal stress a … More nalyses of silicon bulk single crystals with 6 or 8 inches were performed in the cases of the[001] and[111] pulling directions by using the above-mentioned finite element program developed for calculating thermal stress in a bulk single crystal during Czochralski growth. The temperature distribution and shape of a bulk single crystal which were required for the thermal stress analysis were obtained from a computer program for a transient heat conduction analysis. The stress components obtained from the thermal stress analysis was converted into the parameters related with dislocation density. The following were obtained. (1) The dislocation density parameters show the maximum value at the center of the bottom or the side wall near the solid-melt interface. (2) The values of the dislocation density parameters correlate with the shape of the solid-melt interface. (3) The values of the dislocation density parameters are smaller in the case of the[111] pulling direction than in the case of[001] pulling direction. Less

在[001]和[111]拉动方向的情况下，对使用三维有限元元件程序进行了SI，GAA和INP大量单晶的热应力分析。在该程序中考虑了弹性各向异性。从热应力分析获得的应力分量转换为代表滑行菌株的有效应力的参数Sigma_ <tot>。在（111）平面中使用杨氏模量和泊松比，比较了各向异性分析和各向同性分析之间的sigma_ <tot>的值和分布模式。获得以下内容。（1）在[001]拉动方向的情况下，各向同性分析提供了比各向异性分析更大的Sigma_ <tot>值。（2）在[1111拉动方向而言，从两种分析获得的结果之间的差异在于sigma_ <tot>而不是其值的分布模式。助理压力A…在[111]和[111]的范围内，在[001]和[111]的范围内执行了硅的单晶较大的硅构成单晶体的差异。牙齿生长期间的散装单晶。热应力分析所需的散装单晶的温度分布和形状是从计算机程序中获得的，用于瞬态热传导分析。从热应力分析获得的应力分量转化为与位错密度相关的参数。获得以下内容。（1）位错密度参数显示底部或侧壁靠近固体熔体界面附近的最大值。（2）位错密度参数的值与实心熔体界面的形状相关。（3）与[001]拉动方向相比，在[111]拉方向的情况下，位错密度参数的值较小。较少的