Development of Virtual Experiment System for Growth Process of Functional Crystals

功能晶体生长过程虚拟实验系统的开发

基本信息

批准号：
11555035
负责人：
MIYAZAKI Noriyuki
金额：
$ 4.8万
依托单位：
Kyushu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

The following are results of the present research.(1) We developed an axisymmetric computer code for dislocation density evaluation during crystal growth process, in which a bulk single crystal is assumed to be isotropic. Dislocation density analyses were performed for semiconductor single crystals such as Si, GaAs and InP by using this computer code.(2) We developed an axisymmetric computer code for dislocation density evaluation during crystal growth process, in which crystal anisotropy in elastic constants and specific slip directions are approximately considered. That is, the crystal anisotropy is averaged along the azimuthal direction. Such approximation enables axisymmetric finite element modeling. The effect of growth direction on the dislocation density was made clear for GaAs and InP single crystals by using this computer code.(3) We developed a prototype version of a three-dimensional computer code for dislocation density evaluation during crystal growth process, in which the crystal anisotropy is exactly taken into account.(4) We developed an axisymmetric computer code for dislocation density evaluation during ingot annealing process, in which a bulk single crystal is assumed to be isotropic. Dislocation density analyses were performed for a GaAs ingot by using this computer code.(5) We developed a prototype version of a three-dimensional computer code for dislocation density evaluation during ingot annealing process, in which the crystal anisotropy is exactly taken into account.(6) We developed computer codes that can be applied to thermal stress analyses for various kinds of single crystals. These computer codes were integrated into a thermal stress analysis system for the growth of a bulk single crystal, together with a pre- and post-processor.

以下是本研究的结果。（1）我们在晶体生长过程中开发了用于脱位密度评估的轴对称计算机代码，其中假定散装单晶是各向同性的。通过使用此计算机代码对半导体单晶（例如Si，GAA和INP）进行了位错密度分析。（2）我们开发了一种轴对称计算机代码，用于晶体生长过程中的脱位密度评估，其中弹性常数的晶体各向异性和特定滑移方向近似考虑。也就是说，沿方位角平均晶体各向异性平均。这种近似能够实现轴对称有限元建模。通过使用此计算机代码，对于GAA和INP的单晶而言，生长方向对脱位密度的影响。（3）我们在晶体生长过程中开发了三维计算机代码的原型版本，用于晶体各向异性过程中的脱位密度评估，在该过程中，在该过程中，考虑到晶体中的晶体构造在Ingotal Is coperation中的单个过程中，将其确切地考虑到Ingote coperiation。各向同性。通过使用此计算机代码对GAAS INGOT进行了脱位密度分析。（5）我们开发了三维计算机代码的原型版本，用于在Ingot退火过程中进行脱位密度评估，该代码已考虑到晶体各向异性。（6）我们可以将计算机代码应用于各种晶体的热应力分析。这些计算机代码与预处理和后处理器一起集成到用于散装单晶的生长的热应力分析系统中。