Collaborative Research: Electrically Modulated Near-field Thermophotonics with Metal-Oxide-Semiconductor Nanostructures

合作研究：金属氧化物半导体纳米结构的电调制近场热光子学

• 批准号: 2309663
• 负责人: Liping Wang
• 金额: $ 25.2万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-11-01 至 2026-10-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2309663&HistoricalAwards=false
• 关键词: Collaborative; Research; Electrically; Modulated; Near

Collaborative Research: Electrically Modulated Near-field Thermophotonics with Metal-Oxide-Semiconductor Nanostructures Thermophotonics is crucial to heat-to-power conversion, non-contact thermal management, thermal imaging, and laser manufacturing, where dynamically tunable thermal emission or absorption are highly desired with great controllability and versatility. We aim to employ metal-oxide-semiconductor (MOS) nanostructures to achieve significant modulation of radiative heat transfer via electrical tuning with heat flux exceeding the far-field blackbody limit. The success of this project would ultimately lead to novel applications of tunable thermoelectric conversion, heat control, thermal circuits with thermophotonic means. The research outcomes will be quickly disseminated through journal publications, conference presentations and course teaching. The PIs will train the next generation of workforce with an emphasis on broader participation of underrepresented groups such as female and minority students. Graduate students will learn the fundamentals of multiple disciplines, which will well prepare them for solving future energy challenges in engineering communities. The undergraduate research programs at ASU and UA offer a great opportunity for undergraduate students to participate in the research activities in the PIs’ labs. The PIs will engage local K-12 students through various outreaching programs at ASU and UA, aiming to spark their interests in STEM. It is known that the capacitance of planar MOS structures varies with the gate voltage which causes depletion or accumulation of free charge carriers within the semiconductor, but it occurs only in the ultrathin active region very close to the oxide interface on the order of ~10 nm approximated by the Debye length. With the infrared penetration depth of planar semiconductor on the order of micrometers, the absorption variation within such ultrathin active region could barely cause appreciable modulation absorption/emission within the whole structure. The proposed near-field MOS nanostructure would overcome this challenge by utilizing a fin field-effect transistor with the wrap-around ultrathin metal electrode and oxide gate layers as well as near-field effect. The carrier concentration of the semiconductor nanostructures whose diameter is about several tens of nanometers will change significantly with depletion or accumulation upon electrical gating. The drastically varied dielectric functions of the nanostructure layer will lead to electrically modulated near-field radiative heat transfer. By placing the MOS nanostructure in close proximity to an emitting surface with nanometric gap distances, the near-field effect with coupled evanescent waves could occur to enhance the radiative energy significantly surpassing the far-field blackbody limit. The proposed research project will be carried out with a combination of theoretical and experimental tasks including design and theoretical modeling, sample fabrication and characterization, near-field measurements and metrology development, as well as validation and optimization.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

协作研究：具有金属氧化物 - 氧化型纳米结构的电气调节近场嗜热剂对热量转换，非接触热管理，热成像和激光制造至关重要，其中动态可调节的热发射或抽象是具有极高的可调性和吸引力的，具有极高的可控性能和能力。我们旨在采用金属氧化物 - 氧化型纳米结构，以通过电通来进行辐射传热的显着调节，其热通量超过了远场黑体限制。该项目的成功最终将导致可调式热电转换，热控制，热倍率平均值的热电路的新颖应用。研究结果将通过期刊出版物，会议演示和课程教学迅速传播。 PI将培训下一代劳动力，重点是女性和少数族裔学生等代表性不足的团体的更广泛参与。研究生将学习多个学科的基础知识，这将为解决工程社区的未来能源挑战做好准备。 ASU和UA的本科研究计划为本科生提供了一个很好的机会，可以参加PIS实验室的研究活动。 PI将通过ASU和UA的各种宣传计划与当地的K-12学生互动，旨在激发他们对STEM的兴趣。众所周知，平面MOS结构的电容随栅极电压而变化，该电压会导致半导体内的自由载体部署或积累，但仅发生在非常接近氧化物界面的超薄活性区域，该区域的距离约为10 nm。随着平面半导体的红外穿透深度在微米的顺序上，这种超薄活性区域内的荒谬变化几乎不会引起整个结构内令人赞赏的调制损失/发射。拟议的近场MOS纳米结构将通过使用带有包裹的超薄金属电极和氧化物栅极层以及近场效应的Fin Field-Field-Trangect晶体管来克服这一挑战。直径约为几十纳米的半导体纳米结构的载体浓度将随着电控速时的定义或准确性而显着变化。纳米结构层的巨大动态功能将导致电气调节的近场辐射传热。通过将MOS纳米结构与具有纳米间隙距离的发射表面紧密接近，可能会发生近场效应，以增强耦合的ifanscentem波浪，以增强辐射能显着超过远场黑体极限。拟议的研究项目将结合理论和实验任务，包括设计和理论建模，样本制造和表征，近场测量和计量发展以及验证和优化。该奖项反映了NSF的法规任务，并认为通过基金会的知识优点和广泛的cribia criperia criperia criperia criperia criperia criperia criperia criperia criperia criperia criperia criperia criperia均被视为珍贵。