Development of Field Emission Type Ultra-High Vacuum Gauge

场发射型超高真空计的研制

基本信息

  • 批准号:
    02555009
  • 负责人:
  • 金额:
    $ 6.85万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
  • 财政年份:
    1990
  • 资助国家:
    日本
  • 起止时间:
    1990 至 1991
  • 项目状态:
    已结题

项目摘要

Field emission is the electron tunneling through the potential barrier lowered by the high electric field - 0.5V/A. The tunneling rate for the electrons confined in the surface varies sensitively with the adsorption of gas atoms and molecules. In this study the high field required for the field emission was realized by employing a hemispherical apex of a sharp tip of a field emission microscope (FIM) and by applying a high negative voltage. The vacuum was measured by observing the reduction rate of field emission current with time.The study aimed the following items : (1) Improvement of the existing vacuum system up to the vacuum of 10^<-11> - 10^<-13> Torr, (2) Clarification of the relation between the reduction rate of emission current and vacuum, (3) Examination of various metals as tip materials, (4) Evaluation of the advantageous point of multiple tips, (5) Development of a new highly efficient and reliable system to measure emission currents.The results of above items are as follows : (1) The vacuum better than 10^<-11> Torr could not be obtained possibly due to the insufficient surface refinish of the vacuum chamber, (2) It was found that the reduction rate of emission current is fairly well proportional to vacuum, (3) The study indicates that a W tip is more sensitive than an Ir tip for vacuum measurement because the W surface is more active than the Ir surface, (4) No multiple tip was examined because the study of item (5) must be preceded, (5) In order to measure the emission current efficiently and precisely, a 2-dimensional imaging Faraday cage was developed. Since the screen of the imaging cage projects the image of the currents emitted from every apex of the multiple tip, it allows us to examine all the tips directly at a single glance.
场发射是通过高电场降低的潜在屏障的电子隧道-0.5V/a。限制在表面中的电子的隧道速率随气体和分子的吸附而敏感。在这项研究中,通过采用半球形尖端的磁场发射显微镜(FIM)和施加高负电压,实现了场发射所需的高场。通过观察随时间的观察现场发射电流的降低来衡量真空。该研究的目的是以下项目:(1)改进现有的真空系统,直至10^<-11> -11> -10> -10^<-13> torr的真空,(2)澄清各种秘诀和真空材料的降低率,(4)澄清各种秘诀,(3)各种材料(3)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)(4)开发一种新的高效和可靠的系统来测量排放电流。上述结果如下:(1)无法获得比10^<-11>托尔更好的真空,因此无法获得高于10^<-11>托尔的托尔,这可能是由于真空室的表面修补层不足所致(2)的提示是较大的提示,该提示比真空相当敏感的是(3),这是3)(3)iS(3)ww(3)ww iS(3)真空测量是因为W表面比IR表面更活跃,(4)由于必须在项目(5)的研究之前进行多个尖端,因此(5)为了有效地测量发射电流,开发了二维成像法拉第笼子。由于成像笼的屏幕投影了从多个尖端的每个顶点发出的电流的图像,因此它使我们能够直接检查所有尖端。

项目成果

期刊论文数量(30)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
O. Nishikawa, M. Tomitori, F. Iwawaki and N. Hirano: "Correlation Between Scanning Tunneling Microscopy/Spectroscopy Images and Apex Profiles of Scanning Tips" J. Vac. Sci. Technol. A. 8. 421 (1990)
O. Nishikawa、M. Tomitori、F. Iwawaki 和 N. Hirano:“扫描隧道显微镜/光谱图像与扫描尖端顶点轮廓之间的相关性”J. Vac。
  • DOI:
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    0
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  • 通讯作者:
O.Nishikawa,M.Tomitori,F.Iwawaki and N.Hirano: "Correlation Between Scanning Tunneling Microscopy/Spectroscopy Images and Apex Profiles of Scanning Tips" J.Vac.Sci.Technol.A. 8. 421-424 (1990)
O.Nishikawa、M.Tomitori、F.Iwawaki 和 N.Hirano:“扫描隧道显微镜/光谱图像与扫描尖端顶点轮廓之间的相关性”J.Vac.Sci.Technol.A。
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    0
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O.Nishikawa,M.Tomitori and F.Iwawaki: "Atomic Configuration of Tip Apexes and Scanning Tunneling Microscopy-Spectroscopy" Materials Science and Engineering. B8. 81-97 (1991)
O.Nishikawa、M.Tomitori 和 F.Iwawaki:“尖端顶点的原子构型和扫描隧道显微镜-光谱”材料科学与工程。
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    0
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F. Iwawaki, M. Tomitori and O. Nishikawa: "STM/STS observation of Step Structures of Si (001) and (111) Surfaces" J. Vac. Sci. Technol. B. 9. 711 (1991)
F. Iwawaki、M. Tomitori 和 O. Nishikawa:“Si (001) 和 (111) 表面阶梯结构的 STM/STS 观察”J. Vac。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
O.Nishikawa,M.Tomitori and F.Iwawaki: "Atomic Configurations of Tip Apexes and Scanning Tunneling Microscopy/Spectroscopy" Materials Sci.Engineering.
O.Nishikawa、M.Tomitori 和 F.Iwawaki:“尖端顶点的原子构型和扫描隧道显微镜/光谱学”材料科学工程。
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NISHIKAWA Osamu其他文献

NISHIKAWA Osamu的其他文献

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{{ truncateString('NISHIKAWA Osamu', 18)}}的其他基金

Investigation of stress field and pulverization mechanism at the fault rapture front propagating at a high speed
高速传播断层破裂前缘应力场及粉碎机制研究
  • 批准号:
    23654170
  • 财政年份:
    2011
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Evaluation of the residual stress on the fault plane by stick slip experiment and high resolution observation of slip plane
粘滑实验及滑移面高分辨率观测评价断层面残余应力
  • 批准号:
    20540442
  • 财政年份:
    2008
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe
利用扫描原子探针进行绝缘薄层光激场发射的原子水平研究
  • 批准号:
    09450023
  • 财政年份:
    1997
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
TUNNELING CHARACTERISCITCS OF INDIVIDUAL SURFACE ATOMS
单个表面原子的隧道特性
  • 批准号:
    05245106
  • 财政年份:
    1997
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Study on the Advancement of the Geographic Information Science (GIS) and the Organization for the GIS Education and Research
地理信息科学的发展及GIS教育与研究的组织研究
  • 批准号:
    06306012
  • 财政年份:
    1994
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
ATOM MAMIPULATION AND EVALUATION OF PROBING TIPS
原子操纵和探测尖端的评估
  • 批准号:
    05245107
  • 财政年份:
    1993
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Ultra-Fine Surface Analysis by a Combined Instrument of an STM and A-P
STM 和 A-P 组合仪器进行超精细表面分析
  • 批准号:
    01460211
  • 财政年份:
    1989
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Ultramicroanalysis of Conducting Polymers with Atom-Probe
用原子探针对导电聚合物进行超微量分析
  • 批准号:
    61460062
  • 财政年份:
    1986
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Ultra-Microscopic Analysis of Metal-Compound Semiconductor Interfaces by the Atom-Probe Mass Analyzer
利用原子探针质量分析仪对金属化合物半导体界面进行超显微分析
  • 批准号:
    59420038
  • 财政年份:
    1984
  • 资助金额:
    $ 6.85万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)

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