Ultra-Microscopic Analysis of Metal-Compound Semiconductor Interfaces by the Atom-Probe Mass Analyzer

利用原子探针质量分析仪对金属化合物半导体界面进行超显微分析

基本信息

批准号：
59420038
负责人：
NISHIKAWA Osamu
金额：
$ 12.16万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1984
资助国家：
日本
起止时间：
1984 至 1985
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-59420038/
关键词：
Combined atom-probe Pulsed-laser GaAs GaP Al-GaAs interface 金属-化合物半導体界面

项目摘要

The voltage-pulse atom-probe(A-P) analysis of compound semiconductors tends to give an erroneous composition, e.g. more As ions than Ga ions are detected from GaAs. The newly constructed combined A-P of straight, deflected and imaging types made it possible to clarify the cause of the erroneous compositions as the preferential field evaporation of Ga immediately after the evaporation of nearby As atoms. Then it was successfully demonstrated that the A-P can give stoichiometric compositions by adjusting the deflector and pulse voltages.The unique features of the combined A-P are high ion detectability by a chevron electron multiplier with a wide effective incoming area and by a signal height discriminating time digitizer, high-speed data process by a 32-bit computer, and monitoring of an imaging A-P with a storage oscilloscope.Another anticipated approach to analyzing compound semiconductors is to promote field evaporation by irradiating a specimen with a pulsed-laser beam, 0.8 ns wide and a peak power of 200 KW. The present study pointed out that even the A-P analysis with a pulsedlaser fails to give a right composition unless the laser power and tip voltage are not properly adjusted. Utilizing the result of the present study, Al-GaAs interfaces were analyzed by the pulsed-laser A-P, comparing the result obtained by the voltage-pulse A-P. Unexpectedly, a Ga layer was found at the interface of an AlAs layer and the substrate GaAs. At present, the formation mechanism of the Ga layer is under investigation.

复合半导体的电压脉冲原子 - 探针（A-P）分析往往会产生错误的组成，例如从GAAS检测到的是离子而不是离子。新建的直接，偏转和成像类型的A-P组合的A-P可以阐明错误组合物的原因，因为在附近的AS原子蒸发后立即将GA的优先场蒸发为AS AS原子的优先场蒸发。然后，成功证明，A-P可以通过调整偏转器和脉冲电压来提供化学计量组合物。组合A-P的独特特征是通过雪佛龙电子乘数具有高离子的可检测性，具有广泛有效的接入区域，并通过储存32位计算机和监控I IMPORTOR MORPOTION的信号高度驱动器的高度高度来驱动量，并通过较高的信号高度进行预期。分析复合半导体的方法是通过用脉冲激光束（0.8 ns宽，峰值功率为200 kW）辐射样品来促进场蒸发。本研究指出，即使使用脉冲激素的A-P分析也无法给出正确的组成，除非激光功率和尖端电压无法正确调整。利用本研究的结果，通过脉冲激光A-P分析了Al-GAAS界面，并比较了通过电压脉冲脉冲A-P进行的结果。出乎意料的是，在Alas层和底物GAA的界面上发现了GA层。目前，GA层的形成机理正在研究中。