Atomic Level Study of Photo-Stimulated Field Emission from Insulating Thin Layers Utilizing the Scanning Atom Probe

利用扫描原子探针进行绝缘薄层光激场发射的原子水平研究

基本信息

批准号：
09450023
负责人：
NISHIKAWA Osamu
金额：
$ 8.58万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

项目摘要

Irradiation of light to insulators and semi-insulators at a negative bias voltage induces photo-stimulated field emission. Photo-stimulated field ionization and field evaporation are also observed. In this study the correlation between the field emission characteristics and the surface composition of low conductive materials such as CVD and HPHT diamonds, 99.8 and 99.99% purity graphites, vitreous carbon, carbon nano-tubes (CNT), silicon micro-tips, silicon pyramid, silicon grains is investigated utilizing the unique capability of the scanning atom probe(SAP). The photo-stimulated field evaporation was observed by applying pulsed voltage and pulsed YAG laser beam to the specimens. The study revealed that the diamonds contain a large amount of hydrogen depending on the growth process. Many carbon clusters are detected from all carbon specimens, especially form the 99.99% pure graphite. Silicon micro-tips are highly corroded by HF acid. Carbon, oxygen and hydrogen diffuse into the tips. In order to study the photo-stimulated field emission a SiOィイD22ィエD2 layer is deposited covering a transparent conductive layer on a glass plate. However, no photo-stimulated field emission could be observed possibly due to defects in the SiOィイD22ィエD2 layer where leak current flows. Slope and intercept of the F-N plot are plotted. The plotted chart indicates that the work function of the CNT is the lowest among the analyzed specimens. While the work function of the CNT increases by hydrogen adsorption, that of silicon decreases. A new SAP with a position sensitive ion detector is under development to exhibit the 3D-distribution of compositions at an atomic resolution.

在负偏置电压下向绝缘体和半绝缘子的光照射会诱导光刺激的场发射。还观察到光刺激的场电离和场发射。在这项研究中，低导电材料（例如CVD和HPHT钻石），99.8和99.99％的纯含石墨，玻璃碳，碳纳米管（CNT），硅微调，硅微调，硅胶，硅胶，硅胶晶粒的相关性，硅微管（CNT），硅微尖，硅微尖，硅硅形孔，硅胶晶粒的使用量（silicon prob）使用了独特的迹象。通过将脉冲电压和脉冲YAG激光束应用于样品，可以观察到光刺激的现场经济。研究表明，根据生长过程，钻石含有大量氢。从所有碳样本中检测到许多碳簇，尤其是形成99.99％的纯石墨。硅微尖被HF酸高度腐蚀。碳，氧气和氢扩散到尖端。为了研究照片刺激的场发射，SIOI D22I D2层沉积了覆盖玻璃板上的透明导电层。但是，由于SIOI D22i D2层的缺陷，在其中泄漏电流流动的情况下，无法观察到光刺激的场发射。绘制了F-N图的斜率和截距。绘制的图表表明CNT的功能是分析的样品中最低的。尽管CNT的功能通过氢的吸附增加而增加，但硅的功能却下降。正在开发具有位置敏感离子检测器的新SAP，以在原子分辨率下展示组合物的3D分布。