Development of Preparation Methods of SXM Tips with a Ultra-fine Probing Area

具有超精细探测区域的 SXM 探针制备方法的开发

基本信息

批准号：
02555004
负责人：
TOMITORI Masahiko
金额：
$ 5.18万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555004/
关键词：
Scanning X Microscope (SXM)Scanning Tunneling Spectroscopy (STS)Scanning Tunneling Microscope (STM)Atom-Probe Field Ion Microscope (A-P FIM)Field Emission Electron Spectroscopy (FEES)Scanning Tip Apex 位置検出型アトムプロ-ブ原子間力顕微鏡

项目摘要

Scanning X microscope (SXM) is a generic term various scanning microscopes which can depict the topography of sample surfaces in atomic scale by tracing the surfaces with atomically sharpened tips. While scanning the surface with the tip, a tip-sample distance is maintained constant in the SXM operation mode by keeping a physical quantity constant, which is interchanged between the tip apex and the sample surface, and strongly depends on the tip-sample distance. Thus the SXM images processed from the scanning tip tracing show the surface structures with the atomic resolution. A scanning tunneling microscope (STM) is a representative of the SXM family, which utilizes the tunneling current passing between the tip apex and the sample surface. Since the tunneling current is extremely sensitive to the tip-sample distance, even if the distance changes as small as 0.1, A, the current changes remarkably, and the atom-resolved surface images can be obtained by scanning the sample surface with a … More n atomically sharpened tip at a constant tunneling current. In addition to the STM, scanning tunneling spectroscopy (STS), an atomic force microscope (AFM), and the other scanning microscopes have been developed and advanced in a short duration. By the STS the surface state density can be imaged in the atomic resolution from the tunneling current-bias voltage characteristics, and the AFM can depict the surface topography utilizing the force exerted between the tip and the sample.However, the resolution and the reliability of the SXM images depend strongly on the tip sharpness and the stability of the atomic structure. Thus the urgent development of reliable methods to prepare and evaluate SXM tips is indispensable. In this study, using the UHV-STM/STS and the atom-probe field ion microscope combined with a field emission electron spectroscopy (A-P FIM/FEES), the characteristics and availability of the SXM tips prepared by vacuum-and electro-deposition techniques were investigated. The atomic and electronic structures of electrochemically etched Ir tips covered with Ge were studied by the A-P FIM/FEES to get information on changes in the surface states and semiconductive energy gap induced by the deposited Ge. The effects of Ge atoms adsorbed on the scanning tips can be estimated from this experiment. The surface and electronic structures of a conductive polymer were also investigated by the UHV-SnVSTS. Furthermore, the tip covered. with the conductive polymer was developed to study the detailed structures of the electronic-states of the polymer. Less

扫描X显微镜（SXM）是一个通用术语各种扫描显微镜，可以通过以原子锐化的尖端追踪表面来描述原子尺度中样品表面的地形。在用尖端扫描表面时，通过保持物理量恒定，在SXM操作模式下保持尖端样本距离恒定，该物理量恒定，该量在尖端顶点和样品表面之间互换，并且很大程度上取决于尖端样本距离。从扫描尖端跟踪处理的SXM图像显示了具有原子分辨率的表面结构。扫描隧道显微镜（STM）是SXM家族的代表，该家族利用尖端顶点和样品表面之间的隧道电流。由于隧道电流对尖端样本距离极为敏感，即使距离的变化较小至0.1，a，电流明显变化，并且可以通过在恒定的隧道电流下使用…更高的原子尖端扫描样品表面来获得原子分辨的表面图像。除STM外，扫描隧道光谱法（STS），原子力显微镜（AFM）和其他扫描显微镜在短时间内已经开发并进展。通过STS，可以通过隧道电流偏置电压特性在原子分辨率中成像表面状态密度，而AFM可以使用尖端和样品之间执行的力来描述表面地形。但是，SXM图像的分辨率和可靠性在很大程度上取决于原子结构的尖端清晰度和稳定性。紧急开发可靠的方法来准备和评估SXM提示是必不可少的。在这项研究中，研究了使用UHV-STM/ST和原子探针场离子显微镜与场发射电子光谱（A-P FIM/FEES）结合，研究了通过真空和电沉积技术制备的SXM TIPS的特性和可用性。通过A-P FIM/费用研究了用GE覆盖的电化学蚀刻IR尖端的原子和电子结构，以获取有关表面状态变化和沉积GE引起的半导体能量差距的信息。可以从该实验中估算出吸附的GE原子对扫描尖端的影响。 UHV-SNVST还研究了导电聚合物的表面和电子结构。此外，尖端覆盖了。使用导电聚合物开发以研究聚合物电子状态的详细结构。较少的