Theoretical and experimental studies on conducting transparent thin films to obtain highly trasparent films with low sheet resistance

导电透明薄膜以获得低薄层电阻的高透明薄膜的理论和实验研究

基本信息

批准号：
60550014
负责人：
MINAMI Tadatsugu
金额：
$ 1.34万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60550014/
关键词：
conducting transparent film zinc oxide indium tin oxide tin oxide magnetron sputtering transparent electrode

项目摘要

At present, indium tin oxide (ITO) and tin oxide (TO) films have been widely used as transparent electrodes for display devices, transparent touch-switchs and solar cells. It has been also required to prepare a transparent conducting thin film with a sheet resistance below 1 / . It is generally known that the visible transmittance is reduced with decreasing the resistivity for transparent conducting thin films with the resistivity of the order of 10^<-4> cm. However, the theoretical relationship between electrical properties and optical properties of transparent conducting thin films are still poorly understood.The purpose of this reseach project is to investigate the detail of the electrical and optical properties of various transparent conducting thin films, and to realize films with a low-sheet resistance below 1 / . Furthermore, the problem in the pratical use of transparent conducting thin films is also solved. In order to realize ITO, TO and impurity-doped ZnO films with the lowest resistivity, we prepared these films using rf magnetron sputtering in plasma foucsing magnetic field. Detailed measurements of electrical and optical properties were carried out for these films under various conditions, and then the theoretical relationship between these properties was discussed. As the method to obtain the sheet resistance below 1 / , the transparent conducting thin films with multilayer structures is also discussed.

目前，二锡氧化物（ITO）和氧化锡（TO）膜已被广泛用作显示器，透明的触摸开关和太阳能电池的透明电极。还需要准备透明的导电薄膜，薄膜的电阻低于1 /。通常，众所周知，可见的透射率会降低，降低了透明导电薄膜的电阻率，其电阻率为10^<-4> cm。然而，电气性能与透明导电薄膜的光学性质之间的理论关系仍然很少了解。该研究项目的目的是研究各种透明导电薄膜的电气和光学特性的细节，并以低于1 / / 1 /的低表格电阻来实现膜的细节。此外，还解决了透明导电薄膜的原则使用问题。为了实现ITO，电阻率最低的ITO，和杂质掺杂的ZnO膜，我们使用等离子体foucsing磁场中的RF Magnetron溅射制备了这些膜。在各种条件下，对这些薄膜进行了电气和光学特性的详细测量，然后讨论了这些特性之间的理论关系。作为获得低于1 /的板电阻的方法，还讨论了具有多层结构的透明导电薄膜。