Preparation of an inorganic thin film electroluminescent devices using gallium oxide phosphor

氧化镓荧光粉无机薄膜电致发光器件的制备

基本信息

批准号：
13650047
负责人：
MINAMI Tadatsugu
金额：
$ 2.56万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650047/
关键词：
thin film EL oxide phosphor ceramic Ga_2O_3 sol-gel Ga_2O_3蛍光体ゾル・ゲル法薄膜EL素子 BaTiO_3セラミック

项目摘要

High luminance Ga_2O_3 : Mn TFEL devices were fabricated by sol-gel process which eliminate the need for vacuum processes. The sol-gel process also eliminates the need for a heat treatment with a rapid temperature rise. The Ga_2O_3 : Mn thin-film emitting layer was prepared using sol-gel process with gallium acethylacetonate as the Ga source. It should be noted that the highest luminance was obtained with a Ga_2O_3 : Mn TFEL device fabricated by the sol-gel process : luminance of 1271 and 401 cd/m^2 in a device driven at 1kHz and 60 Hz, respectively. In addition, multicolor emitting TFEL devices using Ga_2O_3 : Mn, Cr phosphor thin films could be prepared by chemical deposition using the sol-gel process. A high luminance above 100cd/m^2 was obtained in TFEL devices using Ga_2O_3 : Mn, Cr thin films co-doped with a Cr content up to 2 at.% and Mn content of 0.3 at.% and driven at 1kHz. The emission color from these Ga_2O_3 : Mn, Cr TFEL devices changed from green to red as the co-doped Cr content was varied from 0 to 10 at.%. The emission color changed from green to red as the applied voltage was increased. Thus, this inexpensive method of fabricating Ga_2O_3 : Mn and Ga_2O_3 : Mn, Cr oxide phosphor TFEL devices by a sol-gel process using gallium acethylacetonate, manganese chloride and chromium acethylacetonate is very promising for TFEL displays and lamps.

高亮度GA_2O_3：MN TFEL设备是通过Sol-Gel工艺制造的，从而消除了真空过程的需求。溶胶 - 凝胶过程还消除了温度快速升高的热处理的需求。 GA_2O_3：Mn薄膜发射层是使用乙酰乙酸酯作为GA源的溶胶 - 凝胶过程制备的。应当指出的是，分别在1kHz和60 Hz的设备中，使用Sol-Gel工艺制造的GA_2O_3：MN TFEL设备获得了最高的亮度。此外，使用GA_2O_3的多色发射TFEL设备可以使用Sol-Gel工艺来制备CR磷光薄膜。使用GA_2O_3：MN，Cr薄膜与Cr含量高达2个AT。％，Mn含量为0.3 at 0.％，并在1KHz驱动，在TFEL设备中获得了高于100cd/m^2的高亮度。这些GA_2O_3：MN，Cr TFEL设备的发射颜色从绿色变为红色，因为共掺杂的CR含量从0到10％at。％变化。随着施加电压的增加，发射颜色从绿色变为红色。因此，这种制造GA_2O_3的廉价方法：MN和GA_2O_3：MN，使用抗乙基乙酸甲酯，氯化锰和丙烯酸丙烯酸酯的氧化物磷酸TFEL设备，用于TFEL显示器和灯泡非常有前途。