Property Control of the Multicomponent Oxide Transparent Conducting Thin Films

多元氧化物透明导电薄膜的性能控制

基本信息

批准号：
11650033
负责人：
MINAMI Tadatsugu
金额：
$ 2.3万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650033/
关键词：
Multuicomponent Oxide Transparent and Conducting Thin film Magnetron Sputtering co-doping

项目摘要

Transparent and conductive thin films using new multicomponent oxides consisting of a combination of different binary and ternary compounds have been prepared by r.f. or d.c. magnetron sputtering. Transparent and conductive Zn_2In_2O_5-ZnSnO_3, Zn_2In_2O_5-In_4Sn_3O_<12> and ZnSnO_3-In_4Sn_3O_<12> thin films were prepared over the whole range of compositions in these multicomponent oxides. The electrical, optical, crystaloographcal and chemical properties of these multicomponent thin films were investigated. It was achieved that the electrical and chemical properties of the resulting multicomponent thin films could be controlled by varying the composition in the target. The resistivity, band-gap energy, work function and etching rate of the resulting multicomponent thin films ranged between the properties of the two ternary compound films. As an extension of our previous work, we propose the use of impurity-co-doped oxides for transparent conducting films. For example, Highly transparent and conductive Zn-co-doped ITO (ITO : Zn) thin films were prepared with a Zn content of 0 to 34.1 at% by conventional d.c. magnetron sputtering. A resistivity of 2-3X10^<-4> Ωcm was obtained in ITO : Zn films prepared under optimized conditions with a Zn content of 0-28ar%. The etching rate of ITO : Zn films in a HCl solution could be controlled by the Zn content in the films ; ITO : Zn films prepared with a Zn content of 7.6-34.1 at% wer easily etched in a 1.0 M HCl solution.

R.F.已制备了使用新的多组分氧化物组合的新型多组分氧化物的透明和导电薄膜。或D.C.磁溅射。透明和导电ZN_2IN_2O_2O_5-ZNSNO_3，Zn_2IN_2O_2O_5-IN_4SN_3O_3O_ <12>和ZnSNO_3-IN_4SN_3O_3O_ <12>在这些多组分氧化物中的整个构图中制备了薄膜。研究了这些多组分薄膜的电气，光学，晶体仪和化学性质。可以通过改变目标中的组成来控制所得多组分薄膜的电气和化学特性。产生的多组分薄膜的电阻，带隙能，工作功能和蚀刻速率在两种三元化合物膜的性质之间。作为我们先前工作的延伸，我们建议使用杂质掺杂的氧化物，例如，高度透明和导电性的Zn-co掺杂的ITO（ITO：Zn）薄膜是由常规D.C的Zn含量为0到34.1的Zn含量的。磁控溅射。在ITO：在优化条件下制备的Zn含量为0-28AR％的Zn膜中获得了2-3x10^<-4>ωCM的抗性。 HCl溶液中ITO：Zn膜的蚀刻速率可以由膜中的Zn含量控制； ITO：用Zn含量为7.6-34.1 AT％的Zn膜，我们在1.0 M HCl溶液中很容易蚀刻。