Preparation of Advanced Window Layer for Chalcopyrite Thin Film Photovoltaic Devices

黄铜矿薄膜光伏器件先进窗口层的制备

基本信息

批准号：
09680486
负责人：
YAMAGUCHI Toshiyuki
金额：
$ 2.11万
依托单位：
Wakayama National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09680486/
关键词：
(Cd, Zn)S Window Laver Chemical Bath Deposition Lattice Matching Window Effect Photovoltaic Device 硫化カドミニウム亜鉛

项目摘要

The photovoltaic power system has received considerable attention to solve the environmental problems in the worldwide scale. It is very important to develop the solar cells with low cost and high efficiency. The thin film of chalcopyrite Cu (In, Ga)Se_2 is one of the potential candidates for high-efficiency solar cells, because its efficiency is over 17%. For improvement in Cu(In, Ga)Se_2 based photovoltaic device performance, the lattice matching window material to Cu(In, Ga)Se_2 must be developed and the window absorption loss should be small. The (0001) plane of the wurtzite (Cd, Zn)S alloy system gives the best lattice matching to the (112) plane of Cu (In, Ga)Se_2 over the whole range of [Ga]/([In]+[Ga]) ratio. In this study, my goal is the preparation and characterization of (Cd, Zn)S thin films by chemical bath deposition. I propose the process for preparation of (Cd, Zn)S thin films that all the reactants are mixed after heating to 80ﾟC and the ammonia used as a complexing agent is simultaneously added. The incorporation of Zn into the film and the band gap of (Cd, Zn)S thin films were controlled by varing the amounts of ammonia. Thin films of (Cd, Zn)S were prepared by the improved process which was optimized with the amounts of ammonia playing an important role. X-ray diffraction peaks for the deposited thin films were assigned to diffraction lines from wurizite (Cd, Zn)S.The [Zn]/([Cd]+[Zn]) ratio and the band gaps in the thin films could be controlled by varying the mixture ratio of CdI_2 and ZnI_2 solutions used as reactants. The variation of band gaps yielded the bowing parameter of 0.724 eV.Cu(In, Ga)Se_2 solar cells with the advanced window layer (Cd, Zn)S were prepared. This device showed an open curcuit voltage of 304mV, a short curcuit current of 37.3mA/cm^2, a fill factor of 0.43 3 and an efficiency of 4.91%. Therefore, I proved that the replacement of CdS with (Cd, Zn)S led to the increase in short curcuit current of solar cell.

光伏电源系统已考虑解决世界规模的环境问题。以低成本和高效率开发太阳能电池非常重要。沙尔卡西岩Cu（in Ga）SE_2的薄膜是高效太阳能电池的潜在候选者之一，因为其效率超过17％。为了改善基于CU的CU（IN，GA）SE_2的光伏设备性能，必须开发与Cu（in，GA）SE_2的晶格匹配窗口材料，并且窗口丢失应很小。在整个[GA]/（[in]+[GA]）比的整个范围内，Wurtzite（CD，Zn）S合金系统的（CD，Zn）合金系统的（CD，Zn）合金系统的（0001）平面给出了最佳的晶格匹配。在这项研究中，我的目标是通过化学浴沉积的（CD，Zn）薄膜的制备和表征。我提出了制备（Cd，Zn）薄膜的过程，即加热后所有反应物都混合在一起，并简单地添加用作络合剂的氨。 Zn进入膜的行业和（CD，Zn）薄膜的带隙由氨的数量来控制。（CD，Zn）S的薄膜是通过改进的过程制备的，该过程通过氨的数量进行了优化，从而发挥了重要作用。将沉积的薄膜的X射线衍射峰分配到来自Wurizite（CD，Zn）的衍射线。[Zn]/（[CD]+[Zn]）比，薄膜中的带隙可以通过更改CDI_2和ZNI_2溶液的混合比例来控制。制备了带有高级窗口层（CD，Zn）s的0.724 ev.cu（in Ga）SE_2太阳能电池的弓形参数的变化。该设备显示出304mV的开放式姜黄电压，短姜黄电流为37.3ma/cm^2，填充系数为0.43 3，效率为4.91％。因此，我证明了用（CD，Zn）S替换CD导致太阳能电池的短姜黄电流的增加。