Development of Advanced Thin Film Photovoltaic Device using Chalcopyrite Semiconductor

使用黄铜矿半导体开发先进薄膜光伏器件

• 批准号: 14550314
• 负责人: YAMAGUCHI Toshiyuki
• 金额: $ 2.3万
• 依托单位: Wakayama National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550314/
• 关键词: Solar cell; Chalcopyrite; Buffer layer; Transparent conducting film; Crystal1ization; Chemical bath deposition; RF magnetron sputtering; 気相個相結晶化法; Solar cell; Chalcopyrite; Buffer layer; Transparent conducting film; Crystal1ization; Chemical bath deposition; RF magnetron sputtering; 気相個相結晶化法

It is an important issue to develop a low cost and high efficient solar cel1 in order to make photovoltaic system put in practical use. In this research, the solar cel1 with chalcopyrite semiconductor as an activity layer was investigated. This semiconductor is expectable to provide a low cost device because the optical absorption coefficient is large, and a high efficient device because the band gap is adjustable to the theoretical optimal value. In this research, the purpose is to develop a next-generation thin film solar cell with low cost and high efficiency. Cu(In, Ga) (S, Se)_2 thin films were produced by crystallizing In/CuIn(Ga)Se precursor on Mo/soda lime glass substrate in Se and S mixing atmosphere. Moreover, Cu(In, Ga)Se_2 thin films were produced by thermal treatment of stacked CuInSe/CuGaSe precursor in Se atmosphere. By using this method, the crystallized thin films, which have a chalcopyrite structure and can regulate their composition and band gap, were obtained. The effects of the solution concentration and the annealing after the formation of CdS thin films by chemical bath deposition from iodine compounds were evaluated by the crystallinity, the electrical property and the optical characteristic. Especially, the solar cell performance was rapidly improved by the annealing after formation. The influence of the oxygen introduction effect and the substrate position were evaluated for i-ZnO thin films prepared by sputtering. It was effective to have introduced oxygen into the sputtering gas for a higher resistivity. The annealing of n-ZnO prepared by rf magnetron sputtering with off-axis configuration was carried out to reduce the resistivity. Its value decreased with increasing the annealing temperature. The solar celIs were produced and the change of the efficiency etc. was investigated. The rapid improvement in the open circuit voltage of a solar cell was confirmed by crystallizing in Se atmosphere which added S.

这是一个重要的问题，要开发低成本和高效的太阳能CEL1，以使光伏系统实际使用。在这项研究中，研究了带有金黄铁矿半导体作为活性层的太阳能CEL1。由于光吸收系数较大，并且具有高效的设备，因此该半导体可以提供低成本的设备，因为带隙可以根据理论最佳值调节。在这项研究中，目的是开发低成本和高效率的下一代薄膜太阳能电池。 Cu（in，ga）（s，se）_2薄膜是通过在se和s混合气氛中的mo/soda lime玻璃基板上的/库因（ga）se前体结晶而产生的。此外，通过在SE大气中对堆叠的Cuinse/Cugase前体的热处理，Cu（in Ga）SE_2薄膜是生产的。通过使用这种方法，可以获得具有金黄色岩结构并可以调节其组成和带隙的结晶薄膜。通过结晶度，电特性和光学特性评估了通过化学浴沉积从化学浴沉积中CD薄膜形成CD薄膜后退火的影响。尤其是，形成后的退火迅速改善了太阳能电池性能。评估了通过溅射制备的I-Zno薄膜的氧气引入效果和底物位置的影响。将氧气引入溅射气体以提高电阻率是有效的。通过使用离轴配置进行的RF Magnetron溅射制备的N-ZNO退火以降低电阻率。它的值随着退火温度的升高而降低。产生了太阳能Celis，并研究了效率等的变化。通过在SE大气中结晶的S.确认了太阳能电池的开路电压的快速改善。