Study on efficiency enhancement of next-generation CIGS thin film solar cell by sequential evaporation

顺序蒸镀下一代CIGS薄膜太阳能电池效率提升研究

• 批准号: 22560314
• 负责人: YAMAGUCHI Toshiyuki
• 金额: $ 2.58万
• 依托单位: Wakayama National College of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560314/
• 关键词: 薄膜太陽電池; 三元化合物; カルコパイライト型; 連続成膜法; 薄膜太陽電池; 三元化合物; カルコパイライト型; 連続成膜法

In order to fabricate a next-generation CIGS thin film solar cell, the preparation conditions of the sequential evaporation method using ternary compounds were examined. CIGS thin film solar cell with a high Ga content by controlling the Ga2Se3 addition in the second step was fabricated and demonstrated open circuit voltage Voc=550mV, short circuit current density Isc=23.8mA/cm2, fill factor FF=0.55 and efficiency η=7.25%. This value was updated our previous performance. Moreover it was possible to improve the open circuit voltage by adding Na2Se and In2S3.

为了制造下一代CIGS薄膜太阳能电池，检查了使用三元化合物的顺序经济方法的制备条件。通过在第二步中控制GA2SE3添加的GA2SE3添加，并证明了开路电压VOC = 550mV，短路电流密度ISC = 23.8mA/cm2，填充因子FF = 0.55 = 0.55和效率η= 7.25％。此值已更新了我们以前的性能。此外，可以通过添加NA2SE和IN2S3来改善开路电压。