Photo-resist. Stripping. Technology. by. Gas-liquid. mixture. for. Highly-efficient. Ultra-short-time. Semiconductor. Manufacturing

光刻胶。

• 批准号: 13555084
• 负责人: SUGAWA Shigetoshi
• 金额: $ 8.19万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555084/
• 关键词: Photo-Resist Stripping; Resist-residue Removal; Semiconductor Manufacturing; フォトレジスト剥離; 気液混合; プラズマアッシング

High-performance and ultra-low power consumption PDAs as a degital-network-communication tool is strongly required in the grobal-network-information society. In such tool, large-scale integrated system which can catch up with changing cutstomer needs day by day is essencial, and therefore ultra-short-time semiconductor manufacturing is required. In this study, ultra-short-time and highly efficient photo-resist stripping technology which can drastically improve semiconductor manufacturing efficiency is established.AT first, we have developed a experimental equipment, featuring the ability to hange a injection speed, injection quantity, injection pressure of gas-liquid mixture, substrate movement speed, inozzle movement speed an so on. With this equipment, we have optimized such parameters and obtained that the photo-resiston 8 inch wafer can be stripped only in one minute, nevertheless the arsenic ions implantation (10E16 atoms/cm2) have been taken to the photo-resisit, which cannot be stripped easily even if O2 plasma ashing Followed by the chemical cleaning with the 4:1 mixture of 98% H2SO4 and 30% H2O2 have been done.Moreover, in order to shorten the processing time, we have imvestiated the pre-treatment process Followed by the treatment by the gas-liquid mixture. As a result, we have obtained that the O3-added ultrapure-water treatment with pH control by CO2 addition can effectively remove the photo-resist.As mentioned above, we have established the foundation for the short-time photo-resist stripping technology for highly efficient and ultra-short-time semiconductor manufacturing.

在Grobal-Network-Formformation Society中，强烈需要高性能和超低功耗PDA作为退化网络通信工具。在这样的工具中，大规模的集成系统可以赶上每天不断变化的切割stomer需求，因此需要超短时时间制造。在这项研究中，超短缺且高效的照片抗性剥离技术，可以大大提高半导体制造效率。首先，我们开发了一种实验设备，具有远程注射速度，注射速度，气体液体混合物的注入压力，底物移动速度，底嘴速度的运动速度的能力。借助此设备，我们已经优化了此类参数，并获得了仅在一分钟内剥离的光固定晶片，但是，砷离子植入（10E16原子/cm2）已被带到照相固定上，即使在o2 ashing an2 an2 an2 an2 an2 an2 an2 an2均不能轻松地剥离，即使是4：1％的4：1％han2，也无法剥离。更重要的是，为了缩短处理时间，我们已经取消了预处理过程，然后通过气液混合物进行处理。结果，我们已经获得了通过添加二氧化碳对pH控制的O3添加的超纯水处理可以有效地消除抗照片。

项目成果

大見 忠弘: "ウェットサイエンスが築くプロダクトイノベーション"サイペック(株)RIALIZE事業部門. 295 (2001)

近江忠宏：“湿科学构建的产品创新”CYPEC Co., Ltd. RIALIZE 事业部 295 (2001)

Tadahiro Ohmi: "Product Innovation by Wet-chemical Science"Sipec Inc. Realize Division. 295(total pages) (2001)

Tadahiro Ohmi：“湿化学科学的产品创新”Sipec Inc.实现部门。

T.Ohkawa, Y.Wakayama, S.Kobayashi, S.Sugawa, H.Aharoni, T.Ohmi: "The Effect of Organic Contaminations Molecular Weights in the Cleanroom Air on MOS Devices Degradation- a Controlled Laminar Air Flow Experiment"Extend Abstracts of the 2001 International Co

T.Ohkawa、Y.Wakayama、S.Kobayashi、S.Sukawa、H.Aharoni、T.Ohmi：“洁净室空气中有机污染物分子量对 MOS 器件退化的影响 - 受控层流气流实验”扩展摘要