Highly Sesitive and High-resolution Amplification Solid-State Imagine System with Instant Imaging Parareli Processor
具有即时成像 Parareli 处理器的高灵敏度和高分辨率放大固态成像系统
基本信息
- 批准号:13305024
- 负责人:
- 金额:$ 32.7万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This research aims at realizing of personal mobile system which can instantly import and modify information in worldwide through global network, then make a transmission or a record, and quickly find and utilize a required datum in enormous amount of information. In order to realize such system, instant transmission of the high-definition picture information, record, and search are essential technologies. Therefore, we developed the algorithm which raises the rate of picture compression after separating object completely at the time of imaging, and built the foundation of realization of the intelligent man-machine-interface system equipped with recognition and judgment processing.First, in order to form amorphous photoelectric film used as photoelectric conversion layer without structural failure, we created the gas flow control system featuring the gas pressure control method, which can instantly control composition of gas-mixture in film formation chamber, and microwave excited high- … More density plasma equipment having dual shower-plate featuring low electron temperature, in which the novel exhaust pumps featuring non-equivalent pitch and non-equivalent angle of lead screw are implemented. By using this equipment, we established the foundation to form the highly reliable photoelectric film, which is formed by high-quality CVD, and highly selective RIE for miniaturized contact/ via-hole. Both of processes are realized by the selection of plasma-excitation gases and process-gases, respectively, which can realize suppression of both excess-decomposition of process gases and ion-bombardment-damages.Moreover, in order to realize the highly sensitive and highly efficient image sensor which carries out noise control while imaging picture at the video rate and extracts the attributes and the amount of features which each imaged object has characteristic, such as a position of the depth direction, motion, color balance, and roughness (spatial frequency), on real time, and carries out category separation, we examined the device, circuit, and processing algorithm in detail, and completed the chip design.Furthermore, we devised the technique of choosing the optimal image compression algorithm for every divided object category and established the foundation of the new vector quantization technique which maintains high image quality and realizes the overwhelming high compression rate. Less
这项研究旨在实现个人移动系统,该系统可以通过全球网络在全球范围内立即导入和修改信息,然后进行传输或记录,并快速找到并利用所需的数据以增强的信息。为了实现这种系统,高清图片信息,记录和搜索是必不可少的技术。因此,我们开发了算法,该算法在成像时完全分离对象后提高了图像压缩的速率,并建立了实现智能的人机界面系统的基础在膜形成室和微波炉中,高……更多的密度等离子体设备具有低电子温度的双淋浴板,其中新颖的排气泵具有非等效的螺距和非等效铅螺钉的角度。通过使用此设备,我们建立了基础,形成了由高质量CVD组成的高度可靠的光电膜,并且用于微型触点/ Via-Hole的高度选择性RIE。两个过程均通过分别选择等离子体渗出气体和过程壳来实现,这可以实现抑制过程气体和离子 - 击打损伤的过量分解,从而实现高度敏感且高效的图像传感器,从而在视频速率上进行噪声和提取量的特征,从而实现高度敏感且高效的图像传感器,这些特征是属于视频速率的特征,这些特征的特征是,该特征的特征是,该特征的特征是,这些特征是,该特征的特征是,该特征是,该特征是,该特征是属于的,该特征是属于界面的特征,即在范围内,并在噪声中进行了图像,并且会效果,并呈现出图像的特征。 motion, color balance, and roughness (spatial frequency), on real time, and Carries out category separation, we examined the device, circuit, and processing algorithm in detail, and completed the chip design.Furthermore, we devised the technique of choosing the optimal image compression algorithm for every divided object category and established the foundation of the new vector quantization technique which maintains high image quality and realizes the overwhelming high压缩率。较少的
项目成果
期刊论文数量(20)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.Inoue, K.Sakurai. I.Ueno, T.Koizumi, H.Hiyama, T.Asaba, S.Sugawa: "A 3.25M-pixel APS-C size CMOS Image Sensor"2001 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors. 2001. 16-19 (2001)
S.井上,K.樱井。
- DOI:
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- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Tetsuya Goto: "A New Microwave-Excited Plasma Etching Equipment for Separated Plasma Excited Region from Etching Process Region"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. 444-445 (2002)
Tetsuya Goto:“用于将等离子体激发区域与蚀刻处理区域分离的新型微波激发等离子体蚀刻设备”2002 年国际固态器件和材料会议的扩展摘要。
- DOI:
- 发表时间:
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- 影响因子:0
- 作者:
- 通讯作者:
S.Sugawa, I.Ohshima, H.Ishino, Y.Saito, M.Hirayama, T.Ohmi: "Advantage of Silicon Nitride Gate Insulator Transistor by using Microwave-Excited High-Density Plasma for applying 100nm Technology Node"2001 International Electron Device Meeting, TECHNICAL DIG
S.Sukawa、I.Ohshima、H.Ishino、Y.Saito、M.Hirayama、T.Ohmi:“采用微波激励高密度等离子体的氮化硅栅极绝缘晶体管在100nm技术节点应用中的优势”2001年国际电子
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H. TanaKa, Z. Chuanjie, M. Hirayama, A. Teramoto, S. Sugawa, T. Ohmi: "High Quality Silicon Oxide Film Formed by Diffusion Region PECVD and Oxgen Radical Treatment using Microwave-Excited High-Density"Extended Abstracts of the 2002 International Conferenc
H. TanaKa、Z. Chuanjie、M. Hirayama、A. Teramoto、S. Sukawa、T. Ohmi:“利用微波激发高密度扩散区 PECVD 和氧自由基处理形成高质量氧化硅薄膜”扩展摘要
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
A.Morimoto, K.Kotani, S.Sugawa, T.Ohmi: "Interconnect and Substrate Structure for Gigascale Integration"JAPANASE JOURNAL OF APPLIED PHYSICS. 40・4B. 3038-3043 (2001)
A.Morimoto、K.Kotani、S.Sukawa、T.Ohmi:“千兆级集成的互连和基板结构”日本应用物理学杂志 40・4B 3038-3043(2001)。
- DOI:
- 发表时间:
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- 影响因子:0
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SUGAWA Shigetoshi的其他基金
Accurate measurement and statistical analysis of gate leakage current of MOSFETs with atomically flat interface
原子级平坦界面MOSFET栅极漏电流的精确测量和统计分析
- 批准号:2436012924360129
- 财政年份:2012
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Grant-in-Aid for Scientific Research (B)Grant-in-Aid for Scientific Research (B)
A high performance CMOS image sensor with high sensitivity and wide dynamic range
高性能 CMOS 图像传感器,具有高灵敏度和宽动态范围
- 批准号:1936015119360151
- 财政年份:2007
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Grant-in-Aid for Scientific Research (B)Grant-in-Aid for Scientific Research (B)
An over-100dB wide dynamic range solid-state image sensor with high sensitivity and high S/N ratio.
超过100dB的宽动态范围固态图像传感器,具有高灵敏度和高信噪比。
- 批准号:1636016516360165
- 财政年份:2004
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Grant-in-Aid for Scientific Research (B)Grant-in-Aid for Scientific Research (B)
Photo-resist. Stripping. Technology. by. Gas-liquid. mixture. for. Highly-efficient. Ultra-short-time. Semiconductor. Manufacturing
光刻胶。
- 批准号:1355508413555084
- 财政年份:2001
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Grant-in-Aid for Scientific Research (B)Grant-in-Aid for Scientific Research (B)
相似国自然基金
金刚石高效共掺杂多路微波等离子体CVD设备
- 批准号:62127812
- 批准年份:2021
- 资助金额:828.2 万元
- 项目类别:国家重大科研仪器研制项目
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晶体氮化碳膜的制备及其涂层刀具切削性能的研究
- 批准号:51275232
- 批准年份:2012
- 资助金额:80.0 万元
- 项目类别:面上项目
气体循环直流旋转电弧等离子体喷射动态气相环境下生长金刚石大单晶研究
- 批准号:51102013
- 批准年份:2011
- 资助金额:25.0 万元
- 项目类别:青年科学基金项目
硅基材料纳米管的制备及其锂离子电池性能研究
- 批准号:10974073
- 批准年份:2009
- 资助金额:38.0 万元
- 项目类别:面上项目
相似海外基金
Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD)
感应耦合等离子体化学气相沉积 (ICP-CVD)
- 批准号:519196594519196594
- 财政年份:2023
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Major Research InstrumentationMajor Research Instrumentation
Microporous structure tuning and ultrathin film formation via atmospheric-pressure plasma-enhanced CVD for the development of highly permselective silica membranes
通过大气压等离子体增强 CVD 进行微孔结构调整和超薄膜形成,用于开发高选择性渗透二氧化硅膜
- 批准号:22H0185122H01851
- 财政年份:2022
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Grant-in-Aid for Scientific Research (B)Grant-in-Aid for Scientific Research (B)
Plasma CVD synthesis of atomically precise 1D nanocarbon materials and its innovative applications
原子级精确一维纳米碳材料的等离子体CVD合成及其创新应用
- 批准号:19H0066419H00664
- 财政年份:2019
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Grant-in-Aid for Scientific Research (A)Grant-in-Aid for Scientific Research (A)
Preparation of high durable super-hydrophobic composite films by microwave plasma CVD
微波等离子体CVD制备高耐久超疏水复合薄膜
- 批准号:19K0503719K05037
- 财政年份:2019
- 资助金额:$ 32.7万$ 32.7万
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Creation of New-Generation Nanocarbons Using Plasma CVD
使用等离子体 CVD 创建新一代纳米碳
- 批准号:18K0359818K03598
- 财政年份:2018
- 资助金额:$ 32.7万$ 32.7万
- 项目类别:Grant-in-Aid for Scientific Research (C)Grant-in-Aid for Scientific Research (C)