Fabrication of VCSEL on dislocation free GaAs epitaxial layer grown on Si substrate

在 Si 衬底上生长的无位错 GaAs 外延层上制造 VCSEL

基本信息

批准号：
12555096
负责人：
NARITSUKA Shigeya
金额：
$ 8.64万
依托单位：
Meijo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

"Opto-Electronic Integrated Circuit (OEIC)" is a key device in future information and communications society. Besides electronic signal processing, it makes full use of optoelectronics information processing technology. In order to realize the OEIC, hetero-epitaxial technology is important. For example, dislocation free layer is essential to realize a long lifetime laser as light source. However, dislocation density of GaAs grown on Si is an order of 10^6 cm^<-2> now and is still too high.In order to overcome the above problems and to grow dislocation free crystals, we proposed "microchannel epitaxy (MCE)". In MCE, the information of crystal of substrate is transmitted through the narrow window ("microchannel"), but the information of defects in the substrate is cut off, and reduction of dislocation density can be realized. In this research subject, we grew dislocation free GaAs epitaxial layer on Si substrate and tried to fabricate Vertical Cavity Surface Emitting Laser (VCSEL). Through this research, the following outcome was rewarded.1. A high-performance laser with gain-guided structure was realized on Si substrate. Though the laser was operated only by a pulsed current, the performance of the laser was found no less inferior than that of the laser fabricated on GaAs substrate.2. Incorporation mechanism of oxygen into AlGaAs layers was investigated, because reduction of oxygen impurity is mandatory for the improvement of laser characteristics.3. The performance of the laser was found strongly related to the concentration of oxygen, and it was experimentally confirmed that reduction of oxygen concentration is essential to decrease the threshold current density.4. VCSEL with oxide-confinement structure was fabricated on GaAs substrate and it showed a high-grade performance of laser operation.5. "Oxide block effect" was also tried to utilize in order to improve the flexibility of VCSEL processing.

“光电集成电路（OEIC）”是未来信息和通信社会的关键设备。除了电子信号处理外，它还充分利用光电信息处理技术。为了实现OEIC，异质 - 剧院技术很重要。例如，无位错层对于实现长寿命激光作为光源至关重要。但是，在Si上生长的GAA的脱位密度是现在的10^6 cm^<-2>，现在仍然太高。为了克服上述问题并增加了无脱位晶体，我们提出了“微通道支配（MCE）”。在MCE中，底物晶体的信息通过狭窄的窗口（“微通道”）传输，但是切断了底物缺陷的信息，并可以实现脱位密度的降低。在这项研究主题中，我们在SI底物上生长了无脱位GAA的外延层，并试图制造垂直腔表面发射激光（VCSEL）。通过这项研究，奖励以下结果1。在SI基板上实现了具有增益引导结构的高性能激光器。尽管激光仅由脉冲电流操作，但激光的性能不如GAAS底物上制造的激光均低于2。研究了氧气中的氧气机制，因为氧杂质的减少是必须改善激光特征的强制性。3。发现激光的性能与氧浓度密切相关，并且经过实验证实，氧气浓度的降低对于降低阈值电流密度至关重要。4。在GAAS基板上制造了具有氧化物料结构的VCSEL，它显示出激光操作的高级性能。5。还尝试使用“氧化物块效应”来提高VCSEL处理的灵活性。