Fabrication of VCSEL on dislocation free GaAs epitaxial layer grown on Si substrate

在 Si 衬底上生长的无位错 GaAs 外延层上制造 VCSEL

基本信息

批准号：
12555096
负责人：
NARITSUKA Shigeya
金额：
$ 8.64万
依托单位：
Meijo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

"Opto-Electronic Integrated Circuit (OEIC)" is a key device in future information and communications society. Besides electronic signal processing, it makes full use of optoelectronics information processing technology. In order to realize the OEIC, hetero-epitaxial technology is important. For example, dislocation free layer is essential to realize a long lifetime laser as light source. However, dislocation density of GaAs grown on Si is an order of 10^6 cm^<-2> now and is still too high.In order to overcome the above problems and to grow dislocation free crystals, we proposed "microchannel epitaxy (MCE)". In MCE, the information of crystal of substrate is transmitted through the narrow window ("microchannel"), but the information of defects in the substrate is cut off, and reduction of dislocation density can be realized. In this research subject, we grew dislocation free GaAs epitaxial layer on Si substrate and tried to fabricate Vertical Cavity Surface Emitting Laser (VCSEL). Through this research, the following outcome was rewarded.1. A high-performance laser with gain-guided structure was realized on Si substrate. Though the laser was operated only by a pulsed current, the performance of the laser was found no less inferior than that of the laser fabricated on GaAs substrate.2. Incorporation mechanism of oxygen into AlGaAs layers was investigated, because reduction of oxygen impurity is mandatory for the improvement of laser characteristics.3. The performance of the laser was found strongly related to the concentration of oxygen, and it was experimentally confirmed that reduction of oxygen concentration is essential to decrease the threshold current density.4. VCSEL with oxide-confinement structure was fabricated on GaAs substrate and it showed a high-grade performance of laser operation.5. "Oxide block effect" was also tried to utilize in order to improve the flexibility of VCSEL processing.

“光电集成电路（OEIC）”是未来信息通信社会的关键器件。除电子信号处理外，还充分利用了光电信息处理技术。为了实现OEIC，异质外延技术非常重要。例如，无位错层对于实现作为光源的长寿命激光器至关重要。然而，目前在Si上生长的GaAs位错密度为10^6 cm^-2>数量级，仍然过高。为了克服上述问题，生长无位错晶体，我们提出了“微通道外延”（MCE））”。在MCE中，衬底晶体的信息通过窄窗口（“微通道”）传输，但衬底中的缺陷信息被切断，可以实现位错密度的降低。在本研究课题中，我们在硅衬底上生长了无位错的砷化镓外延层，并尝试制造垂直腔表面发射激光器（VCSEL）。通过本研究，取得了以下成果： 1．在硅衬底上实现了具有增益引导结构的高性能激光器。尽管该激光器仅通过脉冲电流工作，但该激光器的性能并不亚于GaAs衬底上制造的激光器。2．研究了氧掺入AlGaAs层的机理，因为减少氧杂质对于提高激光特性是必须的。 3．研究发现激光器的性能与氧浓度密切相关，并通过实验证实降低氧浓度对于降低阈值电流密度至关重要。 4．在GaAs衬底上制备了氧化物限制结构的VCSEL，并表现出较高的激光工作性能。 5．为了提高VCSEL加工的灵活性，还尝试利用“氧化物块效应”。