INVESTIGATION ON ELECTRONIC CHARACTERISTICS OF SiGe MULTI-QUANTUM WELL CHANNEL MOSFETs ON A SOI SUBSTRATE

SOI 衬底上 SiGe 多量子阱沟道 MOSFET 的电子特性研究

基本信息

批准号：
09450145
负责人：
FUJINAGA Kiyohisa
金额：
$ 5.31万
依托单位：
HOKKAIDO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-09450145/
关键词：
silicon germanium quantum well transistor SOI MOSFET CVD hole current 電界解効果素子

项目摘要

We had developed a heteroepitaxial chemical vapor deposition apparatus on the basis of ultra-clean technology and grew SiGe quantum wells on a silicon or SOI (Silicon On Insulator) substrate by the apparatus. We verified the physical quality of the wells through TEM, SIMS and photoluminescence measurements and found that the wells were defect-free and the Si/SiGe interfaces were very sharp. The energy levels of the quantum wells agreed with those of the theoretical ones. We grew the 40-nm Si at 550℃ on a SOI substrate (a SIMOX wafer was here used) and fabricated a PMOSFET with the 5.9-nm-thick gate silicon oxide. The I-V characteristics of the device were almost all equal to those for the PMOSFET directly formed on a SIMOX wafer. The results indicated the good precision and accuracy of the epitaxial and device processes. We made SiGe-quantum-well-channel PMOSFETs on a SIMOX wafer (gate Si oxide : 5.9 nm, Si cap layer : 7 nm, Ge fraction of SiGe alloy : 0.2, well width : 13 nm, SOI thickness : 280 nm, Si buffer layer on a SOI wafer : 40 nm). We confirmed the current of holes confined to the SiGe well through the I-V characteristics in the saturation and subthreshold regions. Numerical calculation was carried out for the energy levels and charge densities of heavy holes in single and triple SiGe quantum wells with the Si barrier height of 145 meV.We used 0.266 m_0 as the effective mass of heavy holes in the SiGe layers and 12.6 as the permittivity of the layers. A low hole density below 10^<10> cm^<-3> in the wells was assumed. We clarified the energy levels of the single quantum wells related to the well width and demonstrated the relationship between the energy level or charge density and the Si Barrier width of the triple quantum wells.

我们已经根据超清洁技术开发了一种杂产的化学蒸气沉积设备，并通过该设备上的硅或SOI（绝缘硅）底物上种植了SIGE量子井。我们通过TEM，SIMS和光致发光测量验证了井的物理质量，并发现井是无缺陷的，Si/Sige接口非常清晰。量子井的能量水平与理论上的能量水平一致。我们在SOI底物上（这里使用Simox Waver）在550℃处种植40 nm Si，并用5.9 nm厚的闸门氧化硅制造了PMOSFET。该设备的I-V特性几乎等于直接在Simox Waver上形成的PMOSFET的I-V特性。结果表明了外延和装置过程的良好精度和准确性。我们在Simox Waver上制作了Sige-Quantum-Well-Well通道PMOSFET（GATE SI氧化物：5.9 nm，Si Cap层：7 nm，Sige Alloy的GE分数：0.2，良好宽度：13 nm，soi厚度：280 nm，SOI Waver上的Si Buffer层：40 nm）。我们通过饱和度和子阈值区域的I-V特征很好地证实了局面的电流。对单个和三重SIGE量子孔中的重孔的能级和电荷密度进行了数值计算，其Si屏障高度为145 MeV。我们使用0.266 M_0作为SIGE层中的有效重孔和12.6的有效质量，作为层的固定性。假定井中的低孔密度低于10^<10> cm^<-3>。我们阐明了与井宽有关的单个量子井的能级，并证明了能级或电荷密度与三重量子井的SI屏障宽度之间的关系。