Study on Nanometer SOI Device Structure

纳米SOI器件结构研究

• 批准号: 16560305
• 负责人: FUJINAGA Kiyohisa
• 金额: $ 1.54万
• 依托单位: Hokkaido Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560305/
• 关键词: SiGe; SOI; MOSFET; Quantum Well; Buried Channel; Hole Mobility; SIMOX; ダブルチャネル; サブスレッショルド特性; CVD; MOSFET; 電界効果デバイス; 転位密度; 正孔; 移動度; SiGe; SOI; MOSFET; Quantum Well; Buried Channel; Hole Mobility; SIMOX; ダブルチャネル; サブスレッショルド特性; CVD; MOSFET; 電界効果デバイス; 転位密度; 正孔; 移動度

The effective hole mobility of SiGe buried-channel MOSTFT on SOI depends on the SiGe channel structure as well as the crystalline quality. In this work, the two sorts of buried-channel structure that consisted of single quantum well (SQW) and triple quantum wells (TQW) were formed at 550℃ on SIMOX wafers by low-pressure CVD. The growth apparatus was built on the basis of ultra-clean technology. The Ge composition of the alloy was 0.2. The SiGe well width, Lz, was 13 nm for SQW and fixed at 3 nm for TQW. The Si barrier thickness, LB, was 2 and 8 nm for TQW. The MOSFETs with the 5.9 nm gate oxide were fabricated on the layers. The Effective hole mobility, μeff, versus effective electric field, Eeff, for the both device types were obtained at room temperature. The mobility of TQW devices was enhanced nearly by 60 %, compared with that for the SQW devices. The mobility enhancement might be due to the increase of the number of holes trapped in the SiGe quantum wells that had the high hole mobility. The best effective hole mobility was obtained for the triple quantum wells channel device with the 3-nm SiGe well width and 2-nm Si barrier thickness fabricated on 40-nm-thick SOI. It was concluded that the multiple quantum wells channel pMOSFETs on SOI enhanced the effective hole mobility and promoted the device performance.

sige埋入通道的有效孔迁移率在soi上大部分取决于sige通道结构以及晶体质量。在这项工作中，通过低压CVD在Simox Waver上形成了由单个量子井（SQW）和三重量子井（TQW）组成的两种掩埋通道结构。增长设备是基于超级清洁技术建立的。合金的GE组成为0.2。 SIGE井宽度LZ的SQW为13 nm，固定在TQW的3 nm处。 TQW的Si屏障厚度LB为2和8 nm。在层上制造了带有5.9 nm门氧化物的MOSFET。在室温下，有效的孔迁移率，μEFF与有效的电场，EEFF，两种设备类型。与SQW设备相比，TQW设备的移动性几乎增强了60％。迁移率的提高可能是由于被困在具有高孔迁移率的SIGE量子井中的孔数量增加所致。对于在40 nm厚的SOI上制造的3 nm SIGE井宽度和2 nm Si屏障厚度，获得了三重量子井通道设备的最佳有效孔迁移率。结论是，SOI上的多个量子井通道PMOSFET增强了有效的孔迁移率并促进了设备性能。