Property control of semiconductor nanostructure using surface strain as a new parameter

使用表面应变作为新参数的半导体纳米结构的性能控制

基本信息

批准号：
18201015
负责人：
SAKURAI Toshio
金额：
$ 34.28万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-18201015/
关键词：
Surface and Interface STM LEEM 半導体物性

项目摘要

The role of high-index surfaces on the structure and property of semiconductor nanostructure has been investigated. It was found that the {105} surface dominates the growth of Ge on Si substrates, which makes its process complicated. By using the Si surface with the (105) orientation, which is the origin of the complexity, as the substrate for Ge growth, simpler growth has been realized and stronger photoemission has been detected from the fabricated Ge islands. In order to investigate such properties, I worked on the development of spectroscopic technique based on low-energy electron microscopy as well as a scanning tunneling microscopy. Orientation conversion technique using silicon-on-insulator structure has been developed to widen the applications of high-index surfaces. Its validity has been tested on Si(111)-Si(001) conversion for the integration of GaN on Si.

The role of high-index surfaces on the structure and property of semiconductor nanostructure has been investigated. It was found that the {105} surface dominates the growth of Ge on Si substrates, which makes its process complicated.通过将Si表面与（105）方向使用，这是复杂性的起源，因为GE生长的基板已经实现了更简单的生长，并且已经从制造的GE岛中检测到了更强的光发射。为了研究这种特性，我研究了基于低能电子显微镜以及扫描隧道显微镜的光谱技术的开发。 Orientation conversion technique using silicon-on-insulator structure has been developed to widen the applications of high-index surfaces. Its validity has been tested on Si(111)-Si(001) conversion for the integration of GaN on Si.

项目成果

期刊论文数量（21）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Surface properties of Zr50Cu40Al10 bulk metallic glass

DOI：
10.1063/1.2732168
发表时间：
2007-04
期刊：
Applied Physics Letters
影响因子：
4
作者：
K. Nakayama;Y. Yokoyama;T. Sakurai;A. Inoue
通讯作者：
K. Nakayama;Y. Yokoyama;T. Sakurai;A. Inoue

Surface Structure as a Building-Block of Nanostructures (Invited)

表面结构作为纳米结构的构建块（特邀）

DOI：
发表时间：
2007
期刊：
影响因子：
0
作者：
Y. Fujikawa;T. Sakurai;and R. M. Tromp;T. Sakurai and Y. Fujikawa
通讯作者：
T. Sakurai and Y. Fujikawa

Silicon on insulator for symmetry-converted growth

DOI：
10.1063/1.2748099
发表时间：
2007-06-11
期刊：
APPLIED PHYSICS LETTERS
影响因子：
4
作者：
Fujikawa, Y.;Yamada-Takamura, Y.;Sakurai, T.
通讯作者：
Sakurai, T.

Spontaneous aggregation of pentacene molecules and its influence on field effect mobility

DOI：
10.1063/1.2749721
发表时间：
2007-06
期刊：
Applied Physics Letters
影响因子：
4
作者：
Genki Yoshikawa;J. Sadowski;A. Al‐Mahboob;Y. Fujikawa;T. Sakurai;Y. Tsuruma;S. Ikeda;K. Saiki
通讯作者：
Genki Yoshikawa;J. Sadowski;A. Al‐Mahboob;Y. Fujikawa;T. Sakurai;Y. Tsuruma;S. Ikeda;K. Saiki

Spectromicroscopic characterization of Ag surfaces by energy-filtered LEEM

通过能量过滤 LEEM 对银表面进行光谱显微表征