Three-dimensional epitaxial silicon microprobe array integrated on highly functional smart sensing chip

三维外延硅微探针阵列集成在高性能智能传感芯片上

基本信息

批准号：
17206038
负责人：
ISHIDA Makoto
金额：
$ 32.12万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17206038/
关键词：
Smart sensing chip 3-dimensional microprobe Epitaxial silicon probe array Selective Vapor-liquid-solid growth Electrical recording of neurons Neuroscience MOSFET on Si (111) substrate Micro nanotechnology

项目摘要

Three-dimensional silicon microprobes are integrated with MOSFET circuits for use in electrical neural interface applications with microelectronics. We have proposed a vapor-liquid-solid(VLS) method to realize microprobes after the fabrication of on-chip MOSFETs using Si(111) substrate. We investigated the characteristics of the on-chip MOSFETs fabricated on Si(111) substrate. Even though the increased interface state density in the Si(111) MOS system causes low-performance of the MOFET, we have improved the electrical characteristics of the MOSFETs on Si(111) using subsequent processes of fluorine implantation and long-time Hydrogen annealing, that exhibits comparable electrical characteristics of MOSFETs to that on Si (100)substrate. In-situ doping method during the VLS growth is one possibility to realize doped-silicon probes by low-temperature process with less than 700℃. We used PH_3 or B_2H_6 mixed with silicon gas source of Si_2H_6, in order to realize n- or p-type of silicon probes, respectively. Both n- and p-types of silicon probe grown by the in-situ doping process showed low electrical resistance characteristics. Although the above VLS growth method provides probe arrays with a same probe length due to same parameters of the VLS growth, individually controlled length of probe in a same array was still problematic. To realize the different lengths of probes, we also demonstrated a repeated selective VLS growth of silicon microprobes using the catalysis of gold remaining at the tip of a preliminary VLS-grown microprobe, resulting in different probe lengths. Additionally, we have realized the integration of silicon dioxide microtube arrays and the silicon micoroprobe arrays with MOSFETs, for use in simultaneous electrical neural recordings and drug delivery into local neuronal tissue, and this proposed device could be an efficient electrical/chemical neural interface for use in numerous neuroscience applications.

三维硅微探针与MOSFET电路集成在一起，用于用于微电子的电神经界面应用。我们提出了一种使用SI（111）底物制造片上MOSFET后，提出了一种蒸气液 - 固定液（VLS）方法来实现微探测。我们研究了在SI（111）底物上制造的片上MOSFET的特征。即使SI（111）MOS系统中界面状态密度的增加会导致MOFET的表现低，但我们使用后来使用氟植入和长时间氢化的过程提高了MOSFET在SI（111）上的电气特性，从而表现出MOSFET可比较的电气特性，以在SI（100）systrate上表现出可比的电气特性。 VLS增长期间的原位掺杂方法是通过低温过程（少于700℃）实现掺杂的硅质问题的一种可能性。我们使用pH_3或B_2H_6与Si_2H_6的硅气源混合，以分别实现硅问题的N或P型。原位掺杂过程生长的硅探针的N-和P型都显示出低的电阻特性。尽管以上VLS增长方法提供了具有相同探针长度的探针阵列，这是由于VLS增长的相同参数，但同一阵列中单独控制的探针长度仍然有问题。为了实现不同的问题，我们还使用剩余的金的催化剂在初步VLS生长的微型探针的尖端中证明了硅微四射的重复选择性VLS生长，从而产生了不同的探针长度。此外，我们已经意识到将二氧化硅微管阵列和带有MOSFET的硅微管阵列的整合，用于简单的电气神经记录和药物递送到局部神经元组织中，并且该提出的设备可以是有效的电气/化学神经元界面，可用于多种神经科学应用。