Silicon Accelerometer for high temperature applications with Double SOI structure

双 SOI 结构的高温应用硅加速度计

基本信息

批准号：
06555102
负责人：
ISHIDA Makoto
金额：
$ 6.46万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555102/
关键词：
Accelerometer High temperature applications SOI structure Al203 films Finite element method Micro machining Double SOI structure

项目摘要

In this study, an accelerometers for high temperature application have been developed using SOI structure and micromachining technology. At first, an ultrahigh-vacuum chemical vapor deposition (UHV-CVD) with a hot wall heating system have developed to grow double SOI structure [Si/Al203/Si]. The epitaxial Al203 (100) film grown on a Si (100) substrate can be used as etching stop layr and as an electric-isolation layr of an SOI device. Another important technologies for the SOI devices were developed : the one is a new etching method of chemically stable A1203 films and sapphire wafers by Si ion implantation method, and the another is the selective epitaxial growth of Si (100) on Al203 (100) by electron-beam-irradiation method to make fine pattern. As the result, the fundamental technologies for double SOI structure has been developed for accelerometers for high temperature applications.Then, a novel piezoresistive silicon accelerometer and a capacitive accelerometer were designed with finite element method (FEM) of ANSYS.These acoelerometers were fabricated with micromachining technology and integrated circuit technology. The accelerometers can be detect three dimensional acceleration. Next, a package and a measurement system for high temperature up to 400ﾟC were developed, and the characteristics of accelerometers were evaluated. The accelerometer successfully worked at up to 400ﾟC stably, so that it was confirmed that the SOI structure greatly improve the characteristics at high temperature. The temperature characteristics and the output characteristics were compared with simulated result, and it well agrees with simulated result.

在这项研究中，利用SOI结构和微加工技术开发了一种用于高温应用的加速度计。首先，开发了具有热壁加热系统的超高真空化学气相沉积（UHV-CVD）来生长双SOI结构[Si]。在Si(100)衬底上生长的外延Al2O3(100)薄膜可以用作刻蚀停止层和电隔离层。 SOI器件的另一项重要技术是：一是采用Si离子注入法刻蚀化学稳定的Al2O3薄膜和蓝宝石晶片的新方法，二是在Al2O3上选择性外延生长Si（100）（ 100）通过电子束辐照方法制作精细图案，从而开发了用于高温加速度计的双SOI结构的基础技术。然后，利用ANSYS的有限元法（FEM）设计了一种新型压阻式硅加速度计和电容式加速度计。这些加速度计采用微加工技术和集成电路技术制造，可以检测三维加速度。开发了高达400℃高温的测量系统，并对加速度计的特性进行了评估。成功地在高达400℃的温度下稳定工作，证实了SOI结构极大地改善了高温特性。将温度特性和输出特性与仿真结果进行了比较，结果与仿真结果非常吻合。