Behavior of Sputtered Species and Formation of Amorphous Films

溅射物质的行为和非晶态薄膜的形成

基本信息

批准号：
62470063
负责人：
HANADA Teiichi
金额：
$ 4.48万
依托单位：
Kyoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

项目摘要

1) Behavior of Sputtered Species During SIO_2 SputteringIn this study, the abundance distribuyion of nuetral sputtered species during SIO_2 sputtering was investigated by means of a quadrupole mass analyzer. The dependences of the abundance distribution upon O_2 content in the sputtering gas and upon the sputtering power were examined. SO, the neutral sputtered species during SIO_2 sputtering were determined to be Si, SiO, O. O_2. The ratio of the intensity of the mass spectrum for SiO to that for si increased with increasing O_2 content. The dependence of the abundance distribution upon O_2 content in the sputtering gas suggested that Si species reacted with O species to produce SiO species and that O_2 species were produced with the reaction between O species. The intensity of the mass spectra for both si and SiO species increased straightly with increasing the sputtering power, and then in had a plateau. This tendency was discussed in connection with sputtering process.2) Glow Discharge Mass Spectrometry During TeO_2 SputteringThe sputtered species furing TeO_2 sputtering was determined as a function of the oxygen partial pressure by using glow discharge mass spectrometry(GDMS). The oxygen content in the sputtering gas ranged from 0% to 100%. The ionic species during TeO_2 sputtering were found to be O_2^+, Ar^+, Ar_2^+, Te^+, TeO^+ and TeO_2^+. The ration of Te^+ to the total amount of Te^+, TeO^+ and TeO_2^+ decreased with increasing oxygen partial pressure. On the other hand, the opposite tendency was observed for the TeO^+ and the TeO_2^+ species. A fluorescence analysis was used in order to compare the composition of the sputtered species with that of the deposited thin film. This result suggests that the sputtered species react with oxygen on the substrate.

1）在SIO_2溅射过程中，溅射物种的行为在这项研究中，通过四极群质量分析仪研究了SIO_2溅射过程中Nuetral溅射物种的丰度分布。研究了丰度分布对溅射气体和溅射功率中O_2含量的依赖性。因此，SIO_2溅射过程中的中性溅射物种被确定为Si，Sio，O。O_2。 SIO的质谱强度与Si的强度随着O_2含量的增加而增加。溅射气体中丰度分布对O_2含量的依赖性表明，Si物种与O物种反应生产SIO物种，并且O_2种是与O物种之间的反应产生的。 SI和SIO物种的质谱强度随着溅射功率的增加而直接增加，然后在平稳状态下。与溅射过程有关讨论了这种趋势。2）在TEO_2溅射过程中发光放电质谱法溅射物种Furing teo_2溅射是通过使用GLOW放电质谱（GDM）来确定氧气部分压的函数的。溅射气体中的氧含量范围为0％至100％。发现TEO_2溅射过程中的离子物种是O_2^+，Ar^+，Ar_2^+，TE^+，TEO^+和TEO_2^+。 Te^+与TE^+，TEO^+和TEO_2^+的总量的分级随着氧局部压的增加而降低。另一方面，观察到Teo^+和TEO_2^+物种的相反趋势。使用荧光分析，以比较溅射物种的组成与沉积薄膜的组成。该结果表明，溅射物种与氧气在底物上反应。