Study on Novel Surface Emitting Semiconductor Laser for Optically Integrated Multi-functional Optical Devices.

用于光集成多功能光学器件的新型表面发射半导体激光器的研究。

基本信息

批准号：
60460137
负责人：
ITO Hiromasa
金额：
$ 4.74万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1986
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60460137/
关键词：
surface emitting laser reactive ion etching optical integration ultrafine processing 半導体レーザ

项目摘要

It is rather difficult for conventional semiconductor lasers to form 2 dimentional monolithical integration, since they use cleaving to form optical cavitys. In this study, new type of surface emitting laser named Coaxial Transverse Junction (CTJ) is proposed and fabricated for the first time. The CTJ structure is fabricated as follows; the column or well structure is formed by the reactive ion etching onto the n-GaAs/n-AlGaAs/n-GaAs DH wafer, whose side wall is perpendicular to the substrate. Then Zn is diffused to form the pn junction parallel to the side wall. In this structure the length of the active region is corresponded to that of the side wall, so that the relatively latge amplified gain is obtained along the emission direction perpendicular to the substrate.We have investigated three different types of CTJ family called Column type CTJ (C-CTJ), Well type CTJ (W-CTJ) and Hole type CTJ (H-CTJ). In these variations, H-CTJ structure is most suitable for lasing operation, since it does not contain unnecessary layer within the optical resonator. Lasing operation was confirmed by the current-light output characteristic and also the oscillation spectra using H-CTJ sample at 10K. The threshold current was 90 mA. Based on the present data, the threshold current for the room temperature operation of the H-CTJ laser was estimated to be about 200 mA with 90% reflectivity of the mirror. To obtain lower threshold operation, it is necessary to optimize Zn diffusion process and the dimension of the structure. Though these problems are left to solve, the present study shows the fundamental properties of the CTJ structure and its superior properties for 2D applications.

传统半导体激光器采用劈裂方式形成光腔，形成二维单片集成相当困难。在这项研究中，首次提出并制造了名为同轴横向结（CTJ）的新型表面发射激光器。 CTJ结构的制作如下；通过反应离子刻蚀在n-GaAs/n-AlGaAs/n-GaAs DH晶片上形成柱或阱结构，其侧壁垂直于衬底。然后Zn扩散形成平行于侧壁的pn结。在这种结构中，有源区的长度与侧壁的长度相对应，从而沿着垂直于衬底的发射方向获得相对较大的放大增益。我们研究了三种不同类型的CTJ系列，称为柱式CTJ（ C-CTJ）、井式CTJ（W-CTJ）和孔式CTJ（H-CTJ）。在这些变体中，H-CTJ 结构最适合激光操作，因为它在光学谐振腔内不包含不必要的层。激光操作通过电流-光输出特性以及使用 H-CTJ 样品在 10K 下的振荡光谱得到证实。阈值电流为90mA。根据目前的数据，在镜面反射率为 90% 的情况下，H-CTJ 激光器在室温下工作的阈值电流估计约为 200 mA。为了获得更低的阈值操作，有必要优化Zn扩散过程和结构尺寸。尽管这些问题有待解决，但本研究展示了 CTJ 结构的基本特性及其在 2D 应用中的优越特性。