Epitaxial Growth of Diamond on Chemically Modified Surface of Foreign Substrates

金刚石在异质基体化学改性表面上的外延生长

基本信息

批准号：
05453104
负责人：
MOROOKA Shigeharu
金额：
$ 3.78万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

The formation of large-area single-crystal films is a goal of CVD diamond research because of their great potential in microelectronic device technology. In the present study, microwave plasma chemical vapor deposition (MPCVD) was adopted and highlyorientated diamond film was formed by treating the substrate surface by various methods.First, the effect of scratching with fine powders such as diamond, c-BN,alumina and metal borides on diamond deposition was systematically examined. The population density of diamond particles formed on the scratched Si (100) face was greatly increased, but a polycrystalline film was formed in all cases. Heteroepitaxial nucleation and growth of an orientated diamond film were confirmed on the (100) and (111) planes of c-BN single crystal. However, the formation of c-BN single-crystal film was not realized yet.On the other hand, a highly orientated diamond film was grown on the (100) Si substrate by a bias-enhanced MPCVD.The Si surface carburized under optimum conditions showed a "Mesh Structure" on the nanometer scale. The formation of this structure was essential for the nucleation of (100) orientated diamond particles. The growth of randomly orientated diamond particles was then suppressed by changing the reaction condition to that favorable for the (111) growth. At the final stage, CO_2 was mixed in the reactant system and a highly (100) orientated flat diamond film was obtained.

大面积单晶膜的形成是CVD钻石研究的目标，因为它们在微电动设备技术方面具有巨大的潜力。在本研究中，采用了微波血浆化学蒸气沉积（MPCVD），并通过通过各种方法处理底物表面来形成高度取向的钻石膜。首先，用钻石，C-BN，C-BN，铝和金属和金属，铝和金属和金属，铝，金属和金属粉状刮擦的效果系统检查了钻石沉积的硼化物。在刮擦的Si（100）面上形成的钻石颗粒的种群密度大大增加，但在所有情况下都形成了多晶膜。在C-BN单晶的（100）和（111）平面上证实了定向钻石膜的杂质成核和生长。然而，尚未实现C-BN单晶膜的形成。另一方面，通过偏置增强的MPCVD在（100）SI底物上生长了高度取向的钻石膜。在纳米尺度上显示“网格结构”。该结构的形成对于（100）定向钻石颗粒的成核至关重要。然后通过将反应条件更改为（111）生长来抑制随机定向的钻石颗粒的生长。在最后阶段，在反应物系统中将CO_2混合，并获得了高度（100）个取向的平面钻石膜。